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Part Details for QS6J1TR by ROHM Semiconductor
Overview of QS6J1TR by ROHM Semiconductor
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for QS6J1TR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
846-QS6J1CT-ND
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DigiKey | MOSFET 2P-CH 20V 1.5A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8814 In Stock |
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$0.2000 / $0.9900 | Buy Now |
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DISTI #
755-QS6J1TR
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Mouser Electronics | MOSFETs 2P-CH 20V 1.5A TSMT6 RoHS: Compliant | 2974 |
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$0.2000 / $0.6900 | Buy Now |
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Future Electronics | P-Channel + P-Channel 1.25 W -20 V 340 mOhm SMT 2.5 V Drive MosFet -TSMT-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.1960 / $0.2100 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), 20V, 0.235OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 5154 |
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$0.3360 / $1.1200 | Buy Now |
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DISTI #
QS6J1TR
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TME | Transistor: P-MOSFET x2, unipolar, -20V, -1.5A, Idm: -6A, 1.25W Min Qty: 3 | 0 |
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$0.1700 / $0.3030 | RFQ |
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ComSIT USA | VOLT PCH+PCH SMALL SIGNAL MOSFET Power Field-Effect Transistor, 1.5A I(D), 20V, 0.235ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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DISTI #
QS6J1TR
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Avnet Asia | Trans MOSFET Array Dual P-CH 20V 1.5A 6-Pin TSMT T/R (Alt: QS6J1TR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
C1S625901812505
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Chip1Stop | -20V Pch+Pch Small Signal MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 1400 |
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$0.1980 / $0.5850 | Buy Now |
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Win Source Electronics | MOSFET 2P-CH 20V 1.5A TSMT6 / Trans MOSFET P-CH Si 20V 1.5A 6-Pin TSMT T/R | 36000 |
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$0.2550 / $0.3820 | Buy Now |
Part Details for QS6J1TR
QS6J1TR CAD Models
QS6J1TR Part Data Attributes
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QS6J1TR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
QS6J1TR
ROHM Semiconductor
Power Field-Effect Transistor, 1.5A I(D), 20V, 0.235ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.235 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for QS6J1TR
This table gives cross-reference parts and alternative options found for QS6J1TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of QS6J1TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7504TRPBF | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | QS6J1TR vs IRF7504TRPBF |
| IRF7504TR | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | QS6J1TR vs IRF7504TR |
| IRF7504PBF | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 | International Rectifier | QS6J1TR vs IRF7504PBF |
| IRF7504 | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | QS6J1TR vs IRF7504 |
| IRF7504TR | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | QS6J1TR vs IRF7504TR |