Datasheets
R5005CNX by: ROHM Semiconductor

Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Part Details for R5005CNX by ROHM Semiconductor

Overview of R5005CNX by ROHM Semiconductor

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Price & Stock for R5005CNX

Part # Distributor Description Stock Price Buy
DISTI # 846-R5005CNX-ND
DigiKey MOSFET N-CH 500V 5A TO220 Min Qty: 500 Lead time: 23 Weeks Container: Bulk Limited Supply - Call
  • 500 $0.7029
$0.7029 Buy Now
DISTI # 755-R5005CNX
Mouser Electronics MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Does not Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA RoHS: Compliant 0
Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 23 Weeks Container: Reel 0
Reel
  • 500 $0.5150
$0.5150 Buy Now
Quest Components   80
  • 1 $2.2880
  • 16 $1.4300
  • 53 $1.2584
$1.2584 / $2.2880 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 100
  • 1 $1.1950
  • 10 $1.0020
  • 50 $0.8870
  • 100 $0.7900
  • 500 $0.7890
  • 1,000 $0.7870
$0.7870 / $1.1950 Buy Now

Part Details for R5005CNX

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R5005CNX Part Data Attributes

R5005CNX ROHM Semiconductor
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R5005CNX ROHM Semiconductor Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 1.6 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R5005CNX

This table gives cross-reference parts and alternative options found for R5005CNX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R5005CNX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KF5N50FS Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN KEC R5005CNX vs KF5N50FS
PJF5NA50_T0_00001 Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB-F, 3 PIN PanJit Semiconductor R5005CNX vs PJF5NA50_T0_00001
TSM6N50CIC0 Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN Taiwan Semiconductor R5005CNX vs TSM6N50CIC0
KF5N50FZA Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN KEC R5005CNX vs KF5N50FZA
SIHF5N50D-E3 Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies R5005CNX vs SIHF5N50D-E3
UF830L-TF3-T Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Unisonic Technologies Co Ltd R5005CNX vs UF830L-TF3-T
IRF830I-HF TRANSISTOR 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp R5005CNX vs IRF830I-HF
KF5N50FSA Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS(1), 3 PIN KEC R5005CNX vs KF5N50FSA
FQPF5N50CF Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation R5005CNX vs FQPF5N50CF
UF830ZG-TF3-T Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN Unisonic Technologies Co Ltd R5005CNX vs UF830ZG-TF3-T

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