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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-R6006JND3TL1CT-ND
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DigiKey | MOSFET N-CH 600V 6A TO252 Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.9775 / $3.1300 | Buy Now |
DISTI #
R6006JND3TL1
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Avnet Americas | Transistor MOSFET N-CH 600V 6A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6006JND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$1.0166 / $1.1574 | Buy Now |
DISTI #
755-R6006JND3TL1
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Mouser Electronics | MOSFETs Nch 600V 6A Power MOSFET. R6006JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. RoHS: Compliant | 739 |
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$0.9770 / $2.3500 | Buy Now |
DISTI #
36532154
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Verical | Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Min Qty: 86 Package Multiple: 1 | Americas - 100 |
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$0.9520 / $0.9966 | Buy Now |
DISTI #
54688890
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Verical | Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R Min Qty: 14 Package Multiple: 1 | Americas - 70 |
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$0.8313 / $2.2750 | Buy Now |
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Quest Components | 116 |
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$1.2826 / $2.3320 | Buy Now | |
DISTI #
R6006JND3TL1
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Avnet Asia | Transistor MOSFET N-CH 600V 6A 3-Pin TO-252 Emboss T/R (Alt: R6006JND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
R6006JND3TL1
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Avnet Silica | Transistor MOSFET N-CH 600V 6A 3-Pin TO-252 Emboss T/R (Alt: R6006JND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
C1S625901816352
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 70 |
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$0.6650 / $2.1800 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C | 100 |
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$0.5830 / $1.3610 | Buy Now |
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R6006JND3TL1
ROHM Semiconductor
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Datasheet
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Compare Parts:
R6006JND3TL1
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-01-09 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 117 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.936 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |