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Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99Y2395
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Newark | Mosfet, N-Ch, 600V, 15A, To-220Fm, Transistor Polarity:N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.26Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Rohm R6015ENX RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 77 |
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$1.0800 / $1.3600 | Buy Now |
DISTI #
R6015ENX-ND
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DigiKey | MOSFET N-CH 600V 15A TO220FM Min Qty: 1 Lead time: 18 Weeks Container: Bulk |
23 In Stock |
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$0.7438 / $2.5700 | Buy Now |
DISTI #
R6015ENX
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Avnet Americas | Trans MOSFET N-CH 600V 15A 3-Pin TO-220FM Bulk - Tape and Reel (Alt: R6015ENX) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Reel | 0 |
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$1.7797 / $2.0261 | Buy Now |
DISTI #
755-R6015ENX
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Mouser Electronics | MOSFETs 10V Drive Nch MOSFET RoHS: Compliant | 0 |
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$1.6600 / $1.6700 | Order Now |
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Future Electronics | 10V Drive Nch MOSFET RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 18 Weeks Container: Tube | 0Tube |
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$1.7500 / $1.8400 | Buy Now |
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Quest Components | 24 |
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$3.7440 / $5.6160 | Buy Now | |
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Ameya Holding Limited | MOSFET N-CH 600V 15A TO220 Min Qty: 1 | 80-Authorized Distributor |
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$1.9440 / $3.8100 | Buy Now |
DISTI #
C1S625901169342
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Chip1Stop | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant pbFree: Yes | 80 |
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$2.9900 / $3.2900 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2019 Date Code: 2019 | 31 |
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$1.8720 / $5.5720 | Buy Now |
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LCSC | 600V 15A 290m10V6.5A 40W 4V1mA 1 N-Channel TO-220FM-3 MOSFETs ROHS | 46 |
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$0.6955 / $1.1377 | Buy Now |
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R6015ENX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6015ENX
ROHM Semiconductor
Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | TO-220FM, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 284 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.29 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R6015ENX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6015ENX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPA15N60C3XKSA1 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | Infineon Technologies AG | R6015ENX vs SPA15N60C3XKSA1 |
STF15NM60ND | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220FP package | STMicroelectronics | R6015ENX vs STF15NM60ND |
SIHF15N60E-GE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | R6015ENX vs SIHF15N60E-GE3 |
TK14A65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | R6015ENX vs TK14A65W5 |
IPA60R280C6XKSA1 | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | Infineon Technologies AG | R6015ENX vs IPA60R280C6XKSA1 |