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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-R6020KNZ4C13-ND
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DigiKey | MOSFET N-CH 600V 20A TO247 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
410 In Stock |
|
$3.9613 / $7.6900 | Buy Now |
DISTI #
R6020KNZ4C13
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Avnet Americas | Transistor MOSFET N-CH 600V 20A 3-Pin TO-247 Tube - Rail/Tube (Alt: R6020KNZ4C13) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
DISTI #
755-R6020KNZ4C13
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Mouser Electronics | MOSFETs Nch 600V 20A Power MOSFET. R6020KNZ4 is a power MOSFET for switching applications. RoHS: Compliant | 600 |
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$3.9600 / $5.7800 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks Container: Tube | 0Tube |
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$4.1700 | Buy Now |
DISTI #
76881720
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Verical | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 7 Package Multiple: 1 | Americas - 551 |
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$2.6125 / $4.9250 | Buy Now |
DISTI #
37040088
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Verical | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 22 Package Multiple: 1 Date Code: 1801 | Americas - 30 |
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$3.5086 / $3.6661 | Buy Now |
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Bristol Electronics | 953 |
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RFQ | ||
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Quest Components | 762 |
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$4.1058 / $8.2116 | Buy Now | |
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Quest Components | 24 |
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$4.5620 / $6.8430 | Buy Now | |
DISTI #
C1S625901874161
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Tube | 551 |
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$3.5900 / $7.3800 | Buy Now |
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R6020KNZ4C13
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6020KNZ4C13
ROHM Semiconductor
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Date Of Intro | 2018-10-10 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 418 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.196 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R6020KNZ4C13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6020KNZ4C13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPI20N60C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | R6020KNZ4C13 vs SPI20N60C3XKSA1 |
STI20NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | R6020KNZ4C13 vs STI20NM65N |
STW24NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | R6020KNZ4C13 vs STW24NM65N |
IPW60R190C6XK | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | R6020KNZ4C13 vs IPW60R190C6XK |
FCPF165N65S3L1 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE | onsemi | R6020KNZ4C13 vs FCPF165N65S3L1 |
SPW24N60CFDFKSA1 | Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | R6020KNZ4C13 vs SPW24N60CFDFKSA1 |
IPP60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | R6020KNZ4C13 vs IPP60R190C6XKSA1 |
STW23NM60N | 19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | R6020KNZ4C13 vs STW23NM60N |
SIHP22N60S-E3 | TRANSISTOR 22 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix | R6020KNZ4C13 vs SIHP22N60S-E3 |
APT20N60BC3G | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | R6020KNZ4C13 vs APT20N60BC3G |