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Transistors / Power Field-Effect Transistors / R6020KNZ4C13
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R6020KNZ4C13 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6020KNZ4C13 by ROHM Semiconductor

Overview of R6020KNZ4C13 by ROHM Semiconductor

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Price & Stock for R6020KNZ4C13

Part # Distributor Description Stock Price Buy
DISTI # 38AH5900
Newark Mosfet, N-Ch, 600V, 20A, 150Deg C, 231W, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.17Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Rohm R6020KNZ4C13 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $8.3000
  • 10 $7.5000
  • 25 $7.0600
  • 50 $6.6300
  • 100 $6.2000
  • 250 $5.4200
  • 500 $5.0900
$5.0900 / $8.3000 Buy Now
DISTI # 846-R6020KNZ4C13-ND
DigiKey MOSFET N-CH 600V 20A TO247 Min Qty: 1 Lead time: 18 Weeks Container: Tube 418
In Stock
  • 1 $5.3500
  • 30 $4.2750
  • 120 $3.9613
$3.9613 / $5.3500 Buy Now
DISTI # R6020KNZ4C13
Avnet Americas Transistor MOSFET N-CH 600V 20A 3-Pin TO-247 Tube - Rail/Tube (Alt: R6020KNZ4C13) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 600 $4.6901
  • 1,200 $4.5950
  • 2,400 $4.5000
  • 3,600 $4.4049
  • 4,800 $4.3098
  • 6,000 $4.2148
  • 60,000 $4.1197
$4.1197 / $4.6901 Buy Now
DISTI # 755-R6020KNZ4C13
Mouser Electronics MOSFET Nch 600V 20A Power MOSFET. R6020KNZ4 is a power MOSFET for switching applications. RoHS: Compliant 0
  • 600 $3.9600
$3.9600 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks Container: Tube 0
Tube
  • 600 $4.1700
$4.1700 Buy Now
DISTI # 76881720
Verical Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 5 Package Multiple: 1 Americas - 580
  • 7 $4.8875
  • 10 $4.1500
  • 50 $3.1500
  • 100 $3.1375
  • 200 $2.9625
  • 500 $2.6125
$2.6125 / $4.8875 Buy Now
DISTI # 37040088
Verical Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 17 Package Multiple: 1 Date Code: 1801 Americas - 30
  • 17 $4.6756
  • 25 $4.4747
$4.4747 / $4.6756 Buy Now
Bristol Electronics   953
RFQ
Quest Components   24
  • 1 $6.8430
  • 5 $5.0182
  • 16 $4.5620
$4.5620 / $6.8430 Buy Now
Quest Components   762
  • 1 $8.2116
  • 198 $4.5164
  • 444 $4.1058
$4.1058 / $8.2116 Buy Now
DISTI # C1S625901874161
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 580
  • 1 $5.3400
  • 10 $4.5200
  • 50 $4.2700
  • 100 $4.2500
  • 200 $3.9500
  • 500 $3.4700
$3.4700 / $5.3400 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2018 Date Code: 2018 30
  • 1 $5.9980
  • 10 $3.2990
  • 50 $2.9690
  • 100 $2.3280
  • 500 $2.2870
  • 1,000 $2.2810
$2.2810 / $5.9980 Buy Now

Part Details for R6020KNZ4C13

R6020KNZ4C13 CAD Models

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R6020KNZ4C13 Part Data Attributes

Parametric Data
R6020KNZ4C13 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6020KNZ4C13 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Date Of Intro 2018-10-10
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 418 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.196 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6020KNZ4C13

This table gives cross-reference parts and alternative options found for R6020KNZ4C13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6020KNZ4C13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPW60R190C6FKSA1 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG R6020KNZ4C13 vs IPW60R190C6FKSA1
SIHP22N60E-E3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies R6020KNZ4C13 vs SIHP22N60E-E3
SIHB22N60AE-GE3 Power Field-Effect Transistor, Vishay Intertechnologies R6020KNZ4C13 vs SIHB22N60AE-GE3
SPI20N60C3HKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG R6020KNZ4C13 vs SPI20N60C3HKSA1
Q67040-S4550 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG R6020KNZ4C13 vs Q67040-S4550
MMF60R190QTH Power Field-Effect Transistor, MagnaChip Semiconductor Ltd R6020KNZ4C13 vs MMF60R190QTH
SPB20N60S5ATMA1 Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG R6020KNZ4C13 vs SPB20N60S5ATMA1
SIHP22N65E-GE3 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies R6020KNZ4C13 vs SIHP22N65E-GE3
FCPF165N65S3L1 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE onsemi R6020KNZ4C13 vs FCPF165N65S3L1
SIHB22N65E-GE3 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Vishay Intertechnologies R6020KNZ4C13 vs SIHB22N65E-GE3

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