Distributor | Stock | MOQ | Package | QTY Break / Prices |
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View this part on Avnet Europe | 0 | 1 |
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View this part on Farnell | 0 | 1 | Each |
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Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
R6035ENZ1C9
Yes
Obsolete
FLANGE MOUNT, R-PSFM-T3
compliant
EAR99
ROHM Semiconductor
8.58
796 mJ
SINGLE WITH BUILT-IN DIODE
600 V
35 A
0.102 Ω
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
1
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPW60R099C6FKSA1 Transistors | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | R6035ENZ1C9 vs IPW60R099C6FKSA1 |
STW43NM60ND Transistors | N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 package | STMicroelectronics | R6035ENZ1C9 vs STW43NM60ND |
IPP60R099C6 Transistors | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | R6035ENZ1C9 vs IPP60R099C6 |
IPW60R099C6XK Transistors | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | R6035ENZ1C9 vs IPW60R099C6XK |
IPW60R099C6 Transistors | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | R6035ENZ1C9 vs IPW60R099C6 |
SPW35N60C3FKSA1 Transistors | Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | R6035ENZ1C9 vs SPW35N60C3FKSA1 |
SPW35N60C3 Transistors | Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | R6035ENZ1C9 vs SPW35N60C3 |
STW47NM60ND Transistors | Automotive-grade N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package | STMicroelectronics | R6035ENZ1C9 vs STW47NM60ND |