Part Details for R6035ENZ1C9 by ROHM Semiconductor
Results Overview of R6035ENZ1C9 by ROHM Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
R6035ENZ1C9 Information
R6035ENZ1C9 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for R6035ENZ1C9
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R6035ENZ1C9
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Avnet Silica | (Alt: R6035ENZ1C9) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Part Details for R6035ENZ1C9
R6035ENZ1C9 CAD Models
R6035ENZ1C9 Part Data Attributes
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R6035ENZ1C9
ROHM Semiconductor
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Datasheet
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R6035ENZ1C9
ROHM Semiconductor
Power Field-Effect Transistor, 35A I(D), 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Flange Mount, R-Psfm-T3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 796 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.102 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 105 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for R6035ENZ1C9
This table gives cross-reference parts and alternative options found for R6035ENZ1C9. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6035ENZ1C9, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPW35N60C3FKSA1 | Infineon Technologies AG | $5.2609 | Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA | R6035ENZ1C9 vs SPW35N60C3FKSA1 |
| SPW35N60C3 | Infineon Technologies AG | $5.8943 | Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA | R6035ENZ1C9 vs SPW35N60C3 |
| IPW60R099C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | R6035ENZ1C9 vs IPW60R099C6 |
R6035ENZ1C9 Frequently Asked Questions (FAQ)
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The maximum input voltage is 36V, but it's recommended to keep it below 30V for stable operation.
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To ensure stability, use a 10uF or larger ceramic capacitor for CIN and a 22uF or larger ceramic capacitor for COUT, and keep the input and output capacitors close to the IC.
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The minimum input voltage is 5.5V, but it's recommended to keep it above 6V for stable operation.
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The R6035ENZ1C9 is rated for operation up to 125°C, but it's recommended to derate the output current and input voltage at high temperatures to ensure reliability.
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The power dissipation can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.