Distributor | Stock | MOQ | Package | QTY Break / Prices |
---|---|---|---|---|
View this part on Bristol Electronics | 168 | 1 |
|
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View this part on Ameya Holding Limited | 20 | 1 |
|
|
View this part on Avnet Europe | 0 | 1 |
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View this part on Farnell | 0 | 1 | Each |
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Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
188
R6047ENZ1C9
Yes
Obsolete
FLANGE MOUNT, R-PSFM-T3
compliant
EAR99
ROHM Semiconductor
8.56
1135 mJ
SINGLE WITH BUILT-IN DIODE
600 V
47 A
0.072 Ω
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
1
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
R6047KNZ4C13 Transistors | Power Field-Effect Transistor, | ROHM Semiconductor | R6047ENZ1C9 vs R6047KNZ4C13 |
SIHW47N65E-GE3 Transistors | Power Field-Effect Transistor, 47A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | R6047ENZ1C9 vs SIHW47N65E-GE3 |
SPW47N60C3FKSA1 Transistors | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | R6047ENZ1C9 vs SPW47N60C3FKSA1 |
STW54NM65ND Transistors | N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package | STMicroelectronics | R6047ENZ1C9 vs STW54NM65ND |
STW54NM65N Transistors | 50A, 650V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | R6047ENZ1C9 vs STW54NM65N |
Q67040-S4491 Transistors | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | R6047ENZ1C9 vs Q67040-S4491 |
SIHG44N65EF-GE3 Transistors | Power Field-Effect Transistor, 46A I(D), 650V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | R6047ENZ1C9 vs SIHG44N65EF-GE3 |
FMW47N60S1HF Transistors | Power Field-Effect Transistor, | Fuji Electric Co Ltd | R6047ENZ1C9 vs FMW47N60S1HF |
SIHG47N65E-GE3 Transistors | Power Field-Effect Transistor, 47A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | R6047ENZ1C9 vs SIHG47N65E-GE3 |