There are no models available for this part yet.
Overview of RF1K4909296 by Rochester Electronics LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for RF1K4909296 by Rochester Electronics LLC
Part Data Attributes for RF1K4909296 by Rochester Electronics LLC
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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ROCHESTER ELECTRONICS LLC
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Reach Compliance Code
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unknown
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Additional Feature
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MEGAFET
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Configuration
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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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12 V
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Drain Current-Max (ID)
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3.5 A
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Drain-source On Resistance-Max
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0.05 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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MS-012AA
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JESD-30 Code
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R-PDSO-G8
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Number of Elements
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2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL AND P-CHANNEL
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Qualification Status
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COMMERCIAL
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Surface Mount
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YES
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Terminal Finish
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NOT SPECIFIED
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for RF1K4909296
This table gives cross-reference parts and alternative options found for RF1K4909296. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1K4909296, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RF1K49092 | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Fairchild Semiconductor Corporation | RF1K4909296 vs RF1K49092 |
| RF1K4909296 | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Fairchild Semiconductor Corporation | RF1K4909296 vs RF1K4909296 |
| RF1K4909296 | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | RF1K4909296 vs RF1K4909296 |
| RF1K4909296 | 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | RF1K4909296 vs RF1K4909296 |
| RF1K49092 | 3.5A, 12V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | RF1K4909296 vs RF1K49092 |