There are no models available for this part yet.
Overview of RF1K49156 by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 4 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Space Technology
Audio and Video Systems
Aerospace and Defense
Telecommunications
Price & Stock for RF1K49156 by Fairchild Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
2156-RF1K49156-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 386 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1660 In Stock |
|
$0.7800 | Buy Now | |
| Rochester Electronics | RF1K49156 - 6.3A, 30V, 0.03ohm, N-Channel Power MOSFET, MS-012AA ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1660 |
|
$0.6673 / $0.7850 | Buy Now |
CAD Models for RF1K49156 by Fairchild Semiconductor Corporation
Part Data Attributes for RF1K49156 by Fairchild Semiconductor Corporation
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
Package Description
|
SMALL OUTLINE, R-PDSO-G8
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
MEGAFET
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
6.3 A
|
|
Drain-source On Resistance-Max
|
0.03 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
MS-012AA
|
|
JESD-30 Code
|
R-PDSO-G8
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
2 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for RF1K49156
This table gives cross-reference parts and alternative options found for RF1K49156. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1K49156, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RF1K4915696 | 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Rochester Electronics LLC | RF1K49156 vs RF1K4915696 |
| RF1K4915696 | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | RF1K49156 vs RF1K4915696 |
| RF1K4915696 | 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | RF1K49156 vs RF1K4915696 |
| RF1K49156 | 6.3A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | RF1K49156 vs RF1K49156 |