Part Details for RF1S4N100SM9A by Harris Semiconductor
Overview of RF1S4N100SM9A by Harris Semiconductor
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Applications
Security and Surveillance
Internet of Things (IoT)
Telecommunications
Communication and Networking
Price & Stock for RF1S4N100SM9A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RF1S4N100SM9A-ND
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DigiKey | MOSFET N-CH 1000V 4.3A TO263AB Min Qty: 89 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
187 In Stock |
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$3.3900 | Buy Now |
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Rochester Electronics | 24V, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 187 |
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$2.9100 / $3.4200 | Buy Now |
Part Details for RF1S4N100SM9A
RF1S4N100SM9A CAD Models
RF1S4N100SM9A Part Data Attributes
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RF1S4N100SM9A
Harris Semiconductor
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Datasheet
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RF1S4N100SM9A
Harris Semiconductor
Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |