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Power Field-Effect Transistor, 10A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN
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RF4C100BCTCR by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RF4C100BCTCR
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TME | Transistor: P-MOSFET, unipolar, -20V, -10A, Idm: -36A, 2W Min Qty: 1 | 0 |
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$0.2540 / $1.0000 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 580-Authorized Distributor |
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$0.2587 / $0.4397 | Buy Now |
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DISTI #
RF4C100BCTCR
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Avnet Asia | (Alt: RF4C100BCTCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
RF4C100BCTCR
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 4610 |
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$0.2750 / $1.0400 | Buy Now |
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LCSC | 20V 10A 2W 15.6m4.5V10A 1.2V 1 P-Channel DFNWB-6-EP(2x2) Single FETs MOSFETs RoHS | 82 |
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$0.0298 / $0.0570 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 15000 |
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$0.1989 / $0.2138 | Buy Now |
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RF4C100BCTCR
ROHM Semiconductor
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Datasheet
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RF4C100BCTCR
ROHM Semiconductor
Power Field-Effect Transistor, 10A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 15.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from noisy digital signals. Use a 50-ohm microstrip line for the RF output.
Ensure good thermal conductivity by attaching the device to a heat sink or a metal pad on the PCB. Avoid overheating by keeping the device away from high-power components and ensuring good airflow.
The recommended input impedance is 50 ohms. Ensure the input signal is matched to 50 ohms to achieve optimal performance and minimize signal reflections.
No, the RF4C100BCTCR is not designed for use in switching power supplies. It's intended for RF amplification and transmission applications. Using it in a switching power supply may lead to unstable operation and reduced lifespan.
Check the PCB layout for any parasitic oscillations, ensure the device is properly biased, and verify the input signal is within the specified frequency range. Use a spectrum analyzer to identify any unwanted frequency components.