Datasheets
RFD15N06LESM9A by:

Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Part Details for RFD15N06LESM9A by Fairchild Semiconductor Corporation

Overview of RFD15N06LESM9A by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for RFD15N06LESM9A

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RFD15N06LESM9A Part Data Attributes

RFD15N06LESM9A Fairchild Semiconductor Corporation
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RFD15N06LESM9A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 72 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD15N06LESM9A

This table gives cross-reference parts and alternative options found for RFD15N06LESM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD15N06LESM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD15N06LESM9A 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD15N06LESM9A vs RFD15N06LESM9A
RFD15N06LESM Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD15N06LESM9A vs RFD15N06LESM
RFD15N06LESM Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation RFD15N06LESM9A vs RFD15N06LESM
RFD15N06LESM 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD15N06LESM9A vs RFD15N06LESM
Part Number Description Manufacturer Compare
RFD16N06LESM9A 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD15N06LESM9A vs RFD16N06LESM9A
PSMN8R7-80PS Power Field-Effect Transistor Nexperia RFD15N06LESM9A vs PSMN8R7-80PS
PSMN025-100D 47A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3 NXP Semiconductors RFD15N06LESM9A vs PSMN025-100D
PSMN012-80PS Power Field-Effect Transistor Nexperia RFD15N06LESM9A vs PSMN012-80PS
RFD14N06LSM Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD15N06LESM9A vs RFD14N06LSM
PSMN002-25P 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RFD15N06LESM9A vs PSMN002-25P
BUK7509-75A 75A, 75V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RFD15N06LESM9A vs BUK7509-75A
RFD16N03LSM9A Power Field-Effect Transistor, 16A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD15N06LESM9A vs RFD16N03LSM9A
PHP54N06T Power Field-Effect Transistor Nexperia RFD15N06LESM9A vs PHP54N06T
IRF1010NSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD15N06LESM9A vs IRF1010NSTRR

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