Part Details for RFP12N06RLE by Harris Semiconductor
Overview of RFP12N06RLE by Harris Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Automotive
Price & Stock for RFP12N06RLE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFP12N06RLE-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 503 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
13334 In Stock |
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$0.6000 | Buy Now |
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Bristol Electronics | Min Qty: 3 | 10315 |
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$0.4875 / $1.8750 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 8252 |
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$0.5500 / $2.5000 | Buy Now |
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Rochester Electronics | 12A, 60V, 0.16ohm, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 13334 |
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$0.5125 / $0.6029 | Buy Now |
Part Details for RFP12N06RLE
RFP12N06RLE CAD Models
RFP12N06RLE Part Data Attributes
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RFP12N06RLE
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFP12N06RLE
Harris Semiconductor
Power Field-Effect Transistor, 12A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | MEGAFET, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 60 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFP12N06RLE
This table gives cross-reference parts and alternative options found for RFP12N06RLE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP12N06RLE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFP15N08L | Power Field-Effect Transistor, 15A I(D), 80V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP12N06RLE vs RFP15N08L |
| RFP8P05 | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | RFP12N06RLE vs RFP8P05 |
| RFP45N06LE | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | RFP12N06RLE vs RFP45N06LE |
| SPP70N10L | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | RFP12N06RLE vs SPP70N10L |
| RFP4N06L | Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | RFP12N06RLE vs RFP4N06L |
| RFG70N06 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | RFP12N06RLE vs RFG70N06 |
| RFG50N06 | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | RFP12N06RLE vs RFG50N06 |
| RFG75N05E | 75A, 50V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | RFP12N06RLE vs RFG75N05E |
| RFP8P05 | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP12N06RLE vs RFP8P05 |
| RFG50N05L | Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | RFP12N06RLE vs RFG50N05L |