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N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, 800-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M2233
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Newark | Mosfet Transistor, N Channel, 12 A, 100 V, 200 Mohm, 5 V, 2 V Rohs Compliant: Yes |Onsemi RFP12N10L Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 60 |
|
$0.4690 / $1.2500 | Buy Now |
DISTI #
58K9511
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Newark | N Channel Mosfet, 100V, 12A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:12A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Onsemi RFP12N10L Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1013 |
|
$0.5070 / $1.2900 | Buy Now |
DISTI #
28AC1611
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Newark | Fet 100V 200.0 Mohm To220 Rohs Compliant: Yes |Onsemi RFP12N10L Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.5580 / $1.2000 | Buy Now |
DISTI #
RFP12N10L-ND
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DigiKey | MOSFET N-CH 100V 12A TO220-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube |
5434 In Stock |
|
$0.4516 / $1.2000 | Buy Now |
DISTI #
RFP12N10L
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Avnet Americas | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: RFP12N10L) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 19 Weeks, 0 Days Container: Tube | 0 |
|
$0.4471 / $0.5337 | Buy Now |
DISTI #
58K9511
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Avnet Americas | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 58K9511) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 4 Days Container: Bulk | 958 Partner Stock |
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$0.5870 / $1.2900 | Buy Now |
DISTI #
512-RFP12N10L
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Mouser Electronics | MOSFET TO-220AB N-Ch Power RoHS: Compliant | 1553 |
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$0.5160 / $1.2000 | Buy Now |
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Future Electronics | N-Channel 100 V 0.2 Ω Flange Mount Logic Level Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 400Tube |
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$0.4650 / $0.5550 | Buy Now |
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Future Electronics | N-Channel 100 V 0.2 Ω Flange Mount Logic Level Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Container: Tube | 0Tube |
|
$0.4650 / $0.5650 | Buy Now |
DISTI #
RFP12N10L
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TME | Transistor: N-MOSFET, unipolar, 100V, 12A, 60W, TO220AB Min Qty: 1 | 43 |
|
$0.7000 / $1.2500 | Buy Now |
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RFP12N10L
onsemi
Buy Now
Datasheet
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Compare Parts:
RFP12N10L
onsemi
N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, 800-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220AB, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RFP12N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP12N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RFP8P05 | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | RFP12N10L vs RFP8P05 |
RFP15N08L | Power Field-Effect Transistor, 15A I(D), 80V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP12N10L vs RFP15N08L |
RFG50N06LE | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | RFP12N10L vs RFG50N06LE |
RFP14N06L | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | RFP12N10L vs RFP14N06L |
STP3NA60FI | 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN | STMicroelectronics | RFP12N10L vs STP3NA60FI |
RFP50N06LE | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP12N10L vs RFP50N06LE |
RFP14N06L | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP12N10L vs RFP14N06L |
RFP15P05 | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP12N10L vs RFP15P05 |
RFP15P06 | Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | RFP12N10L vs RFP15P06 |
RFP70N06 | N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE | onsemi | RFP12N10L vs RFP70N06 |