Part Details for RFP6P08 by Harris Semiconductor
Overview of RFP6P08 by Harris Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFP6P08
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 180 |
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RFQ | ||
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Bristol Electronics | 3 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 17200 |
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$1.0440 / $2.7840 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 144 |
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$1.4980 / $2.9960 | Buy Now |
Part Details for RFP6P08
RFP6P08 CAD Models
RFP6P08 Part Data Attributes
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RFP6P08
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFP6P08
Harris Semiconductor
Power Field-Effect Transistor, 6A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 150 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 60 W | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 250 ns | |
Turn-on Time-Max (ton) | 160 ns |
Alternate Parts for RFP6P08
This table gives cross-reference parts and alternative options found for RFP6P08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP6P08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9521 | Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | RFP6P08 vs IRF9521 |
RFP6P08 | 6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFP6P08 vs RFP6P08 |
RFP6P10 | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFP6P08 vs RFP6P10 |
IRF9520 | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFP6P08 vs IRF9520 |
IRF9521-001 | Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP6P08 vs IRF9521-001 |
RFP6P08 | 6A, 80V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | RFP6P08 vs RFP6P08 |
IRF9521 | Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | RFP6P08 vs IRF9521 |
RFP6P10 | Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP6P08 vs RFP6P10 |
IRF9521-010 | Power Field-Effect Transistor, 6.8A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP6P08 vs IRF9521-010 |
IRF9521 | Power Field-Effect Transistor, 6A I(D), 80V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP6P08 vs IRF9521 |