Part Details for RJK0365DPA-02#J0B by Renesas Electronics Corporation
Overview of RJK0365DPA-02#J0B by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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RJK0365DPA-02#J0B | Renesas Electronics Corporation | N Channel Power MOSFET | |
RJK0365DPA-02#J0 | Renesas Electronics Corporation | N Channel Power MOSFET |
Part Details for RJK0365DPA-02#J0B
RJK0365DPA-02#J0B CAD Models
RJK0365DPA-02#J0B Part Data Attributes
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RJK0365DPA-02#J0B
Renesas Electronics Corporation
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Datasheet
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RJK0365DPA-02#J0B
Renesas Electronics Corporation
N Channel Power MOSFET, WPAK(3F), /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | WPAK(3F) | |
Package Description | SMALL OUTLINE, R-PDSO-N5 | |
Pin Count | 8 | |
Manufacturer Package Code | PWSN0008DC | |
Reach Compliance Code | compliant | |
ECCN Code | 5A002 | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0127 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RJK0365DPA-02#J0B
This table gives cross-reference parts and alternative options found for RJK0365DPA-02#J0B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RJK0365DPA-02#J0B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR3708 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | RJK0365DPA-02#J0B vs IRFR3708 |
RJK03M6DPA-00-J5A | 30A, 30V, 0.0126ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | RJK0365DPA-02#J0B vs RJK03M6DPA-00-J5A |
RJK0365DPA-02-J0 | 30A, 30V, 0.0127ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, WPAK(2), 8 PIN | Renesas Electronics Corporation | RJK0365DPA-02#J0B vs RJK0365DPA-02-J0 |
RJK0365DPA-02-J0B | 30A, 30V, 0.0127ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | RJK0365DPA-02#J0B vs RJK0365DPA-02-J0B |
IPB13N03LB | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | RJK0365DPA-02#J0B vs IPB13N03LB |