There are no models available for this part yet.
Overview of RJK03B7DPA-00-J5A by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| RJK03B7DPA-00#J5A | Renesas Electronics Corporation | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | |
| RJK03B7DPA-00#J53 | Renesas Electronics Corporation | N Channel Power MOSFET |
Price & Stock for RJK03B7DPA-00-J5A by Renesas Electronics Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 194 |
|
RFQ |
CAD Models for RJK03B7DPA-00-J5A by Renesas Electronics Corporation
Part Data Attributes for RJK03B7DPA-00-J5A by Renesas Electronics Corporation
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|
|
|---|---|
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Rohs Code
|
Yes
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|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
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|
Package Description
|
SMALL OUTLINE, R-PDSO-N5
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|
Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
30 V
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Drain Current-Max (ID)
|
30 A
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Drain-source On Resistance-Max
|
0.0107 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-PDSO-N5
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Number of Elements
|
1
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Number of Terminals
|
5
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
|
N-CHANNEL
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|
Power Dissipation-Max (Abs)
|
30 W
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Pulsed Drain Current-Max (IDM)
|
120 A
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Surface Mount
|
YES
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Terminal Form
|
NO LEAD
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Terminal Position
|
DUAL
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Transistor Application
|
SWITCHING
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|
Transistor Element Material
|
SILICON
|
Alternate Parts for RJK03B7DPA-00-J5A
This table gives cross-reference parts and alternative options found for RJK03B7DPA-00-J5A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RJK03B7DPA-00-J5A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR3707Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | RJK03B7DPA-00-J5A vs IRFR3707Z |
| RJK03B7DPA-00#J5A | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | RJK03B7DPA-00-J5A vs RJK03B7DPA-00#J5A |
| TPH11003NL | Nch VDSS≤30V | Toshiba America Electronic Components | RJK03B7DPA-00-J5A vs TPH11003NL |
| IRLR7821HR | Power Field-Effect Transistor, 30A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | RJK03B7DPA-00-J5A vs IRLR7821HR |