Datasheets
RP1E100XNTR by: ROHM Semiconductor

Power Field-Effect Transistor, 10A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN

Part Details for RP1E100XNTR by ROHM Semiconductor

Overview of RP1E100XNTR by ROHM Semiconductor

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Price & Stock for RP1E100XNTR

Part # Distributor Description Stock Price Buy
DISTI # RP1E100XNTR
Avnet Americas Transistor MOSFET N-Channel 30V 10A 6-Pin MPT T/R - Tape and Reel (Alt: RP1E100XNTR) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ
DISTI # RP1E100XNTR
Avnet Americas Transistor MOSFET N-Channel 30V 10A 6-Pin MPT T/R - Tape and Reel (Alt: RP1E100XNTR) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ

Part Details for RP1E100XNTR

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RP1E100XNTR Part Data Attributes:

RP1E100XNTR ROHM Semiconductor
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RP1E100XNTR ROHM Semiconductor Power Field-Effect Transistor, 10A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F4
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F4
JESD-609 Code e2
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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