Part Details for RSD200N10TL by ROHM Semiconductor
Overview of RSD200N10TL by ROHM Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Part Details for RSD200N10TL
RSD200N10TL CAD Models
RSD200N10TL Part Data Attributes:
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RSD200N10TL
ROHM Semiconductor
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Datasheet
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RSD200N10TL
ROHM Semiconductor
Power Field-Effect Transistor, 20A I(D), 100V, 0.059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.059 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RSD200N10TL
This table gives cross-reference parts and alternative options found for RSD200N10TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RSD200N10TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS4228TRRPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | RSD200N10TL vs IRFS4228TRRPBF |
| IRFS250B_FP001 | Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | RSD200N10TL vs IRFS250B_FP001 |
| MTW26N15E | 26A, 150V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | RSD200N10TL vs MTW26N15E |
| SGSP577 | 20A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | RSD200N10TL vs SGSP577 |
| 2SK3600-01SJ | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | RSD200N10TL vs 2SK3600-01SJ |
| RFH25N20 | Power Field-Effect Transistor, 25A I(D), 200V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Harris Semiconductor | RSD200N10TL vs RFH25N20 |
| FDD3690_NL | Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | RSD200N10TL vs FDD3690_NL |
| SUM85N15-19-E3 | TRANSISTOR 85 A, 150 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | RSD200N10TL vs SUM85N15-19-E3 |
| RFH25N20 | 25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Intersil Corporation | RSD200N10TL vs RFH25N20 |
| SUM75N15-18P-E3 | Power Field-Effect Transistor, 75A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | RSD200N10TL vs SUM75N15-18P-E3 |