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Part Details for RSM002N06T2L by ROHM Semiconductor
Results Overview of RSM002N06T2L by ROHM Semiconductor
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RSM002N06T2L Information
RSM002N06T2L by ROHM Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RSM002N06T2L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AC8963
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Newark | Mosfet, N-Ch, 60V, 0.25A, Vmt, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:250Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Rohm RSM002N06T2L RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 16455 |
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$0.1000 / $0.2900 | Buy Now |
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DISTI #
01AM0466
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Newark | Mosfet, N-Channel, 60V, 0.25A, Vmt Rohs Compliant: Yes |Rohm RSM002N06T2L RoHS: Compliant Min Qty: 8000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0800 / $0.0890 | Buy Now |
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Bristol Electronics | Min Qty: 20 | 4840 |
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$0.0501 / $0.2505 | Buy Now |
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DISTI #
RSM002N06T2L
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TME | Transistor: N-MOSFET, unipolar, 60V, 250mA, Idm: 1A, 150mW, VMT3 Min Qty: 1 | 0 |
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$0.0547 / $0.2700 | RFQ |
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DISTI #
RSM002N06T2L
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IBS Electronics | RSM002N06 SERIES N-CHANNEL 60 V 2.4 OHM 200 MW SURFACE MOUNT MOSFET - VMT-3 Min Qty: 8000 Package Multiple: 1 | 16000 |
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$0.0647 / $0.0683 | Buy Now |
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DISTI #
RSM002N06T2L
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Avnet Asia | (Alt: RSM002N06T2L) RoHS: Compliant Min Qty: 8000 Package Multiple: 8000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
RSM002N06T2L
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Avnet Silica | (Alt: RSM002N06T2L) RoHS: Compliant Min Qty: 8000 Package Multiple: 8000 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
RSM002N06T2L
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 14644 |
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$0.0423 / $0.2890 | Buy Now |
Part Details for RSM002N06T2L
RSM002N06T2L CAD Models
RSM002N06T2L Part Data Attributes
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RSM002N06T2L
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RSM002N06T2L
ROHM Semiconductor
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VMT3, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Vmt3, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.25 A | |
| Drain-source On Resistance-Max | 3.2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-F3 | |
| JESD-609 Code | e2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 0.15 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for RSM002N06T2L
This table gives cross-reference parts and alternative options found for RSM002N06T2L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RSM002N06T2L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N7002KW-AU_R1_000A1 | PanJit Semiconductor | $0.0781 | Small Signal Field-Effect Transistor, | RSM002N06T2L vs 2N7002KW-AU_R1_000A1 |
| RU1L002SNTL | ROHM Semiconductor | $0.1055 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, UMT3F, 3 PIN | RSM002N06T2L vs RU1L002SNTL |
| 2N7002KTB | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | RSM002N06T2L vs 2N7002KTB |
| 2N7002KW | Secos Corporation | Check for Price | Small Signal Field-Effect Transistor | RSM002N06T2L vs 2N7002KW |
| 2N7002KTB_R1_10001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | RSM002N06T2L vs 2N7002KTB_R1_10001 |
| 2N7002KW_R2_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | RSM002N06T2L vs 2N7002KW_R2_00001 |
| 2N7002KWT/R7 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | RSM002N06T2L vs 2N7002KWT/R7 |
| 2N7002KW | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Small Signal Field-Effect Transistor | RSM002N06T2L vs 2N7002KW |
| BSS138WL6327HTSA1 | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | RSM002N06T2L vs BSS138WL6327HTSA1 |
| 2N7002KW | Formosa Microsemi Co Ltd | Check for Price | Small Signal Field-Effect Transistor | RSM002N06T2L vs 2N7002KW |
RSM002N06T2L Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the RSM002N06T2L is -55°C to 150°C.
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To ensure reliability, it's essential to follow the recommended derating guidelines, ensure proper thermal management, and consider the device's thermal resistance and power dissipation.
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The recommended gate resistor value for the RSM002N06T2L is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
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Yes, the RSM002N06T2L is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses, gate charge, and thermal management.
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To protect the RSM002N06T2L from ESD, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application.