Part Details for RT1P434T2 by Isahaya Electronics Corporation
Overview of RT1P434T2 by Isahaya Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Part Details for RT1P434T2
RT1P434T2 CAD Models
RT1P434T2 Part Data Attributes
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RT1P434T2
Isahaya Electronics Corporation
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RT1P434T2
Isahaya Electronics Corporation
Transistor
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ISAHAYA ELECTRONICS CORP | |
Package Description | SMALL OUTLINE, R-PDSO-F3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 4.7 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 50 | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.125 W | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 150 MHz | |
VCEsat-Max | 0.3 V |