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Overview of RT1P434U by Isahaya Electronics Corporation
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- Number of FFF Equivalents: ( 0 replacements )
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- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
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Automotive
CAD Models for RT1P434U by Isahaya Electronics Corporation
Part Data Attributes for RT1P434U by Isahaya Electronics Corporation
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Part Life Cycle Code
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Contact Manufacturer
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Ihs Manufacturer
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ISAHAYA ELECTRONICS CORP
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Package Description
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SMALL OUTLINE, R-PDSO-G3
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Reach Compliance Code
|
unknown
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ECCN Code
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EAR99
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HTS Code
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8541.21.00.75
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Additional Feature
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BUILT IN BAIS RESISTOR RATIO IS 4.7
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Collector Current-Max (IC)
|
0.1 A
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Collector-Emitter Voltage-Max
|
50 V
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Configuration
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SINGLE WITH BUILT-IN RESISTOR
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DC Current Gain-Min (hFE)
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50
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JESD-30 Code
|
R-PDSO-G3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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PNP
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Power Dissipation Ambient-Max
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0.15 W
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Power Dissipation-Max (Abs)
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0.15 W
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Transition Frequency-Nom (fT)
|
150 MHz
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VCEsat-Max
|
0.3 V
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