RT1P434U
Description: Transistor

Overview of RT1P434U by Isahaya Electronics Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

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Part Data Attributes for RT1P434U by Isahaya Electronics Corporation

RT1P434U
Isahaya Electronics Corporation
-
-
Part Life Cycle Code
Contact Manufacturer
Ihs Manufacturer
ISAHAYA ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.21.00.75
Additional Feature
BUILT IN BAIS RESISTOR RATIO IS 4.7
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
50
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
PNP
Power Dissipation Ambient-Max
0.15 W
Power Dissipation-Max (Abs)
0.15 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
150 MHz
VCEsat-Max
0.3 V
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