Part Details for S2301 by ROHM Semiconductor
Overview of S2301 by ROHM Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Part Details for S2301
S2301 CAD Models
S2301 Part Data Attributes
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S2301
ROHM Semiconductor
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Datasheet
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S2301
ROHM Semiconductor
Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | UNCASED CHIP, X-XXUC-N | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.111 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | X-XXUC-N | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | UNSPECIFIED | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for S2301
This table gives cross-reference parts and alternative options found for S2301. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S2301, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTHL080N120SC1A | Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE | onsemi | S2301 vs NTHL080N120SC1A |
| NTHL080N120SC1 | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | S2301 vs NTHL080N120SC1 |
| NVHL080N120SC1A | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE, Automotive Qualified | onsemi | S2301 vs NVHL080N120SC1A |
| SCT2080KE | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | S2301 vs SCT2080KE |
| SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | S2301 vs SCT2080KEGC11 |
| SCH2080KE | Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | S2301 vs SCH2080KE |
| SCT2080KEC11 | Power Field-Effect Transistor, | ROHM Semiconductor | S2301 vs SCT2080KEC11 |
| MSC080SMA120S | Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | Microchip Technology Inc | S2301 vs MSC080SMA120S |