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Transistors / Power Field-Effect Transistors / SCT2080KE
Datasheets
SCT2080KE by: ROHM Semiconductor

Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3

Part Details for SCT2080KE by ROHM Semiconductor

Overview of SCT2080KE by ROHM Semiconductor

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Part Details for SCT2080KE

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SCT2080KE Part Data Attributes

Parametric Data
SCT2080KE ROHM Semiconductor
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SCT2080KE ROHM Semiconductor Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 40 A
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 262 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for SCT2080KE

This table gives cross-reference parts and alternative options found for SCT2080KE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT2080KE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCT2080KEC11 Transistors Power Field-Effect Transistor, ROHM Semiconductor SCT2080KE vs SCT2080KEC11
SCH2080KE Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KE vs SCH2080KE
Part Number Description Manufacturer Compare
NTHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi SCT2080KE vs NTHL080N120SC1
S2301 Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor SCT2080KE vs S2301
NTHL080N120SC1A Transistors Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi SCT2080KE vs NTHL080N120SC1A
SCH2080KE Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KE vs SCH2080KE
MSC080SMA120S Transistors Power Field-Effect Transistor, Microsemi Corporation SCT2080KE vs MSC080SMA120S
SCT2080KEC11 Transistors Power Field-Effect Transistor, ROHM Semiconductor SCT2080KE vs SCT2080KEC11

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