Datasheets
SCT2080KEC by: ROHM Semiconductor

Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3

Part Details for SCT2080KEC by ROHM Semiconductor

Overview of SCT2080KEC by ROHM Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SCT2080KEC

Part # Distributor Description Stock Price Buy
DISTI # 04X6732
Newark Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Product Range:- Rohs Compliant: Yes |Rohm SCT2080KEC Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Ameya Holding Limited   Min Qty: 1 15-Authorized Distributor
  • 1 $22.5600
$22.5600 Buy Now
DISTI # 2345465
element14 Asia-Pacific MOSFET, 1200V, 40A, SIC, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $36.5631
  • 5 $33.8890
  • 10 $31.1855
  • 50 $30.0101
  • 100 $29.5840
$29.5840 / $36.5631 Buy Now
DISTI # 2345465
Farnell MOSFET, 1200V, 40A, SIC, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 20 Weeks, 1 Days Container: Each 0
  • 1 $23.4256
  • 5 $21.6093
  • 10 $19.7930
  • 50 $19.3949
$19.3949 / $23.4256 Buy Now

Part Details for SCT2080KEC

SCT2080KEC CAD Models

SCT2080KEC Part Data Attributes

SCT2080KEC ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
SCT2080KEC ROHM Semiconductor Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 16 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 262 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for SCT2080KEC

This table gives cross-reference parts and alternative options found for SCT2080KEC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT2080KEC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCH2080KE Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KEC vs SCH2080KE
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor SCT2080KEC vs SCT2080KEC11
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor SCT2080KEC vs SCT2080KEGC11
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KEC vs SCT2080KE
Part Number Description Manufacturer Compare
NTHL080N120SC1A Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi SCT2080KEC vs NTHL080N120SC1A
NTHL080N120SC1 Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi SCT2080KEC vs NTHL080N120SC1
NVHL080N120SC1A Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE, Automotive Qualified onsemi SCT2080KEC vs NVHL080N120SC1A
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KEC vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor SCT2080KEC vs SCT2080KEGC11
SCH2080KE Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCT2080KEC vs SCH2080KE
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor SCT2080KEC vs SCT2080KEC11
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor SCT2080KEC vs S2301
MSC080SMA120S Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc SCT2080KEC vs MSC080SMA120S

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