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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AH4677
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Newark | Mosfet, N-Ch, 1.2Kv, 40A, 175Deg C, 262W, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:1.2Kv, On Resistance Rds(On):0.08Ohm, Rds(On) Test Voltage Vgs:18V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Rohm SCT2080KEHRC11 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$28.0500 / $39.9000 | Buy Now |
DISTI #
SCT2080KEHRC11-ND
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DigiKey | SICFET N-CH 1200V 40A TO247N Min Qty: 1 Lead time: 24 Weeks Container: Tube |
4849 In Stock |
|
$29.8182 / $38.3700 | Buy Now |
DISTI #
SCT2080KEHRC11
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Avnet Americas | AUTOMOTIVE GRADE N-CHANNEL SIC POWER MOSFET - Rail/Tube (Alt: SCT2080KEHRC11) Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Tube | 450 |
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$23.3200 | Buy Now |
DISTI #
755-SCT2080KEHRC11
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Mouser Electronics | MOSFET 1200V 40A 262W SIC 80mOhm TO-247N RoHS: Compliant | 317 |
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$28.7100 / $38.2900 | Buy Now |
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Future Electronics | 1200 V 40A Automotive Grade N-Channel SiC Power MOSFET-TO-247N RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
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$29.2300 / $29.8100 | Buy Now |
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Quest Components | 680 |
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$31.8120 / $42.4160 | Buy Now | |
DISTI #
SCT2080KEHRC11
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Avnet Americas | AUTOMOTIVE GRADE N-CHANNEL SIC POWER MOSFET - Rail/Tube (Alt: SCT2080KEHRC11) Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 1 Days Container: Tube | 450 |
|
$23.3200 | Buy Now |
DISTI #
SCT2080KEHRC11
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Avnet Americas | AUTOMOTIVE GRADE N-CHANNEL SIC POWER MOSFET - Rail/Tube (Alt: SCT2080KEHRC11) Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 1 Days Container: Tube | 450 |
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$23.3200 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 450 |
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$21.2080 / $42.8450 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 400 |
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$21.2080 / $42.8450 | Buy Now |
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|
SCT2080KEHRC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
SCT2080KEHRC11
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Date Of Intro | 2018-12-14 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.117 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for SCT2080KEHRC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT2080KEHRC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SCT3080KLHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | SCT2080KEHRC11 vs SCT3080KLHRC11 |
SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | SCT2080KEHRC11 vs SCT2080KEGC11 |
MSC080SMA120B | Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | SCT2080KEHRC11 vs MSC080SMA120B |