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Part Details for SCT3040KLGC11 by ROHM Semiconductor
Results Overview of SCT3040KLGC11 by ROHM Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
SCT3040KLGC11 Information
SCT3040KLGC11 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SCT3040KLGC11
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05AC9462
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Newark | Mosfet, N-Ch, 1.2Kv, 55A, To-247N-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Power Dissipation:262W Rohs Compliant: Yes |Rohm SCT3040KLGC11 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$29.8500 / $39.0900 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 90 |
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$20.6529 / $23.3472 | Buy Now |
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DISTI #
SCT3040KLGC11
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 55A, 262W, TO247 Min Qty: 1 | 0 |
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$47.5800 | RFQ |
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DISTI #
SCT3040KLGC11
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 121 |
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$21.1000 / $39.0000 | Buy Now |
Part Details for SCT3040KLGC11
SCT3040KLGC11 CAD Models
SCT3040KLGC11 Part Data Attributes
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SCT3040KLGC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
SCT3040KLGC11
ROHM Semiconductor
Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-247n, 3 Pin | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 27 Weeks | |
| Date Of Intro | 2017-03-13 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | 265 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon Carbide |
Alternate Parts for SCT3040KLGC11
This table gives cross-reference parts and alternative options found for SCT3040KLGC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT3040KLGC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SCT3040KLC11 | ROHM Semiconductor | Check for Price | Power Field-Effect Transistor, 55A I(D), 1200V, 0.052ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | SCT3040KLGC11 vs SCT3040KLC11 |
SCT3040KLGC11 Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance.
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation.
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Yes, the SCT3040KLGC11 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout is optimized for high-frequency operation and follow the recommended gate drive circuitry.
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Handle the device by the body or use an anti-static wrist strap. Ensure that the PCB has ESD protection circuits and follow proper ESD handling procedures during assembly.