Datasheets
SCT3080KLHRC11 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for SCT3080KLHRC11 by ROHM Semiconductor

Overview of SCT3080KLHRC11 by ROHM Semiconductor

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Price & Stock for SCT3080KLHRC11

Part # Distributor Description Stock Price Buy
DISTI # SCT3080KLHRC11
Avnet Americas Transistor MOSFET N-CH 1200V 31A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT3080KLHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 1 Lead time: 53 Weeks, 1 Days Container: Tube 900
  • 450 $19.2180
  • 460 $18.6915
  • 910 $18.1649
  • 2,300 $17.6384
  • 4,500 $17.1119
  • 23,000 $16.8486
  • 45,000 $16.4537
$16.4537 / $19.2180 Buy Now
DISTI # SCT3080KLHRC11
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 31A, Idm: 77A, 165W Min Qty: 1 0
  • 1 $24.3200
  • 3 $21.8600
  • 10 $19.2900
  • 30 $17.3600
$17.3600 / $24.3200 RFQ
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 369
  • 1 $28.6550
  • 5 $15.7600
  • 10 $14.1840
$14.1840 / $28.6550 Buy Now
DISTI # 3052190
Farnell MOSFET, N-CH, 1.2KV, 31A, 175DEG C, 165W RoHS: Compliant Min Qty: 1 Lead time: 45 Weeks, 1 Days Container: Each 426
  • 1 $22.6544
  • 5 $21.7732
  • 10 $20.8920
  • 50 $19.3743
  • 100 $17.8567
  • 250 $17.5018
$17.5018 / $22.6544 Buy Now
Microchip USA SICFET N-CH 1200V 31A TO247N RoHS: Compliant Min Qty: 100 Container: Tube 3535
RFQ

Part Details for SCT3080KLHRC11

SCT3080KLHRC11 CAD Models

SCT3080KLHRC11 Part Data Attributes

SCT3080KLHRC11 ROHM Semiconductor
Buy Now Datasheet
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SCT3080KLHRC11 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2018-12-11
Samacsys Manufacturer ROHM Semiconductor
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.104 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 265
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 165 W
Pulsed Drain Current-Max (IDM) 77 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for SCT3080KLHRC11

This table gives cross-reference parts and alternative options found for SCT3080KLHRC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT3080KLHRC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor SCT3080KLHRC11 vs SCT2080KEC11
MSC080SMA120B Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc SCT3080KLHRC11 vs MSC080SMA120B
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor SCT3080KLHRC11 vs SCT2080KEGC11
Part Number Description Manufacturer Compare
MSC080SMA120B Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc SCT3080KLHRC11 vs MSC080SMA120B
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor SCT3080KLHRC11 vs SCT2080KEGC11
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor SCT3080KLHRC11 vs SCT2080KEC11
MSC080SMA120B4 Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc SCT3080KLHRC11 vs MSC080SMA120B4
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor SCT3080KLHRC11 vs S2301
NVHL080N120SC1 Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified onsemi SCT3080KLHRC11 vs NVHL080N120SC1
MSC080SMA120S Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc SCT3080KLHRC11 vs MSC080SMA120S
NTHL080N120SC1 Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi SCT3080KLHRC11 vs NTHL080N120SC1

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