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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SCT3080KLHRC11
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Avnet Americas | Transistor MOSFET N-CH 1200V 31A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT3080KLHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 1 Lead time: 53 Weeks, 1 Days Container: Tube | 900 |
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$16.4537 / $19.2180 | Buy Now |
DISTI #
SCT3080KLHRC11
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 31A, Idm: 77A, 165W Min Qty: 1 | 0 |
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$17.3600 / $24.3200 | RFQ |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 369 |
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$14.1840 / $28.6550 | Buy Now |
DISTI #
3052190
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Farnell | MOSFET, N-CH, 1.2KV, 31A, 175DEG C, 165W RoHS: Compliant Min Qty: 1 Lead time: 45 Weeks, 1 Days Container: Each | 426 |
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$17.5018 / $22.6544 | Buy Now |
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Microchip USA | SICFET N-CH 1200V 31A TO247N RoHS: Compliant Min Qty: 100 Container: Tube | 3535 |
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RFQ |
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SCT3080KLHRC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
SCT3080KLHRC11
ROHM Semiconductor
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-12-11 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.104 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 265 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 165 W | |
Pulsed Drain Current-Max (IDM) | 77 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for SCT3080KLHRC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT3080KLHRC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SCT2080KEC11 | Power Field-Effect Transistor, | ROHM Semiconductor | SCT3080KLHRC11 vs SCT2080KEC11 |
MSC080SMA120B | Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | SCT3080KLHRC11 vs MSC080SMA120B |
SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | SCT3080KLHRC11 vs SCT2080KEGC11 |