Part Details for SD1229-08 by Microsemi Corporation
Overview of SD1229-08 by Microsemi Corporation
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Part Details for SD1229-08
SD1229-08 CAD Models
SD1229-08 Part Data Attributes
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SD1229-08
Microsemi Corporation
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Datasheet
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SD1229-08
Microsemi Corporation
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | POST/STUD MOUNT, O-XRPM-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS | |
Collector Current-Max (IC) | 4 A | |
Collector-Base Capacitance-Max | 130 pF | |
Collector-Emitter Voltage-Max | 18 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 5 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-XRPM-F4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz |