Part Details for SDF50N40JAMWU1B by Solitron Devices Inc
Overview of SDF50N40JAMWU1B by Solitron Devices Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for SDF50N40JAMWU1B
SDF50N40JAMWU1B CAD Models
SDF50N40JAMWU1B Part Data Attributes
|
|
SDF50N40JAMWU1B
Solitron Devices Inc
Buy Now
Datasheet
|
Compare Parts:
SDF50N40JAMWU1B
Solitron Devices Inc
Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SOLITRON DEVICES INC | |
| Package Description | FLANGE MOUNT, R-MSFM-T5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | CUSTOM BENT LEAD OPTIONS ARE AVAILABLE | |
| Configuration | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MSFM-T5 | |
| Number of Elements | 2 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 500 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 219 ns | |
| Turn-on Time-Max (ton) | 173 ns |
Alternate Parts for SDF50N40JAMWU1B
This table gives cross-reference parts and alternative options found for SDF50N40JAMWU1B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SDF50N40JAMWU1B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF50N40JAMZD1B | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMZD1B |
| SDF50N40JAMZU1B | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMZU1B |
| SDF50N40JAMWD1B | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMWD1B |
| SDF50N40JAMESN | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMESN |
| SDF50N40JAMZD1Z | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMZD1Z |
| SDF50N40JAMEU1N | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMEU1N |
| SDF50N40JAMED1Z | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMED1Z |
| SDF50N40JAMWSZ | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMWSZ |
| SDF50N40JAMZSZ | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMZSZ |
| SDF50N40JAMED1B | Power Field-Effect Transistor, 50A I(D), 400V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF50N40JAMWU1B vs SDF50N40JAMED1B |