Part Details for SDF9NA80JAAXGD1N by Solitron Devices Inc
Overview of SDF9NA80JAAXGD1N by Solitron Devices Inc
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Part Details for SDF9NA80JAAXGD1N
SDF9NA80JAAXGD1N CAD Models
SDF9NA80JAAXGD1N Part Data Attributes
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SDF9NA80JAAXGD1N
Solitron Devices Inc
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Datasheet
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SDF9NA80JAAXGD1N
Solitron Devices Inc
Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SOLITRON DEVICES INC | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 240 W | |
| Power Dissipation-Max (Abs) | 240 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 142 ns | |
| Turn-on Time-Max (ton) | 63 ns |
Alternate Parts for SDF9NA80JAAXGD1N
This table gives cross-reference parts and alternative options found for SDF9NA80JAAXGD1N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SDF9NA80JAAXGD1N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF9NA80JABEHSZ | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JABEHSZ |
| SDF9NA80JABXGSZ | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JABXGSZ |
| SDF9NA80JAAEGSZ | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JAAEGSZ |
| SDF9NA80JAAXGU1Z | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JAAXGU1Z |
| SDF9NA80JABEGU1N | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JABEGU1N |
| SDF9NA80JABSHD1Z | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JABSHD1Z |
| SDF9NA80JAASHU1B | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JAASHU1B |
| SDF9NA80JABEGSB | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JABEGSB |
| SDF9NA80JABXGU1B | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JABXGU1B |
| SDF9NA80JAAXGD1B | Power Field-Effect Transistor, 9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF9NA80JAAXGD1N vs SDF9NA80JAAXGD1B |