Datasheets
SEMIX302GB126HDS by: SEMIKRON

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN

Part Details for SEMIX302GB126HDS by SEMIKRON

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Part Details for SEMIX302GB126HDS

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SEMIX302GB126HDS Part Data Attributes:

SEMIX302GB126HDS SEMIKRON
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SEMIX302GB126HDS SEMIKRON Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X15
Pin Count 15
Manufacturer Package Code CASE SEMIX 2S
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 300 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X15
JESD-609 Code e3/e4
Number of Elements 2
Number of Terminals 15
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 700 ns
Turn-on Time-Nom (ton) 370 ns
VCEsat-Max 2.1 V

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