Datasheets
SGP13N60UF by:

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN

Part Details for SGP13N60UF by Samsung Semiconductor

Overview of SGP13N60UF by Samsung Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for SGP13N60UF

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SGP13N60UF Part Data Attributes

SGP13N60UF Samsung Semiconductor
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SGP13N60UF Samsung Semiconductor Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH SPEED SWITCHING
Collector Current-Max (IC) 13 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 280 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 160 ns
Turn-on Time-Nom (ton) 41 ns

Alternate Parts for SGP13N60UF

This table gives cross-reference parts and alternative options found for SGP13N60UF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGP13N60UF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation SGP13N60UF vs SGP13N60UF
Part Number Description Manufacturer Compare
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc SGP13N60UF vs APT35GN120SG
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier SGP13N60UF vs IRGBC40U
IXGH22N50B Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SGP13N60UF vs IXGH22N50B
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation SGP13N60UF vs HGTP12N60D1
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation SGP13N60UF vs HGTG30N60C3
HGTP12N60A4 Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation SGP13N60UF vs HGTP12N60A4
IRG4IBC10UDPBF Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 Infineon Technologies AG SGP13N60UF vs IRG4IBC10UDPBF
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SGP13N60UF vs IXGH17N100
APT30GT60BRD Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Advanced Power Technology SGP13N60UF vs APT30GT60BRD
IRG4BC30SPBF Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG SGP13N60UF vs IRG4BC30SPBF

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