Part Details for SHD218505B by Sensitron Semiconductors
Overview of SHD218505B by Sensitron Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SHD218505B
SHD218505B CAD Models
SHD218505B Part Data Attributes:
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SHD218505B
Sensitron Semiconductors
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Datasheet
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SHD218505B
Sensitron Semiconductors
Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5B, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SENSITRON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-XSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.415 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SHD218505B
This table gives cross-reference parts and alternative options found for SHD218505B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SHD218505B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFN440 | Power Field-Effect Transistor, 6.1A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | SHD218505B vs IRFN440 |
| IRFM450DPBF | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | SHD218505B vs IRFM450DPBF |
| 2N7228 | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | SHD218505B vs 2N7228 |
| 2N7221 | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | TT Electronics Resistors | SHD218505B vs 2N7221 |
| SHD2253 | Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Sensitron Semiconductors | SHD218505B vs SHD2253 |
| STFM440VP | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | SHD218505B vs STFM440VP |
| STFM350SLX | Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | SHD218505B vs STFM350SLX |
| IRFM450-QR-BR1 | 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | SHD218505B vs IRFM450-QR-BR1 |
| IRFM340D | Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | SHD218505B vs IRFM340D |
| IRFM450U | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | SHD218505B vs IRFM450U |