Part Details for SI2305DS-T1-GE3 by Vishay Intertechnologies
Overview of SI2305DS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
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Part Details for SI2305DS-T1-GE3
SI2305DS-T1-GE3 CAD Models
SI2305DS-T1-GE3 Part Data Attributes
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SI2305DS-T1-GE3
Vishay Intertechnologies
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Datasheet
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SI2305DS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 8 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
Alternate Parts for SI2305DS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2305DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2305DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI2305DS-T1 | Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | SI2305DS-T1-GE3 vs SI2305DS-T1 |
SI2305DS | Transistor | Vishay Siliconix | SI2305DS-T1-GE3 vs SI2305DS |