Datasheets
SI2306BDS-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SI2306BDS-T1-GE3 by Vishay Intertechnologies

Overview of SI2306BDS-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI2306BDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 16P3706
Newark N Channel Mosfet, 30V, 4A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2306BDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.2240
$0.2240 Buy Now
DISTI # SI2306BDS-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2056
  • 6,000 $0.1990
  • 12,000 $0.1924
  • 18,000 $0.1858
  • 24,000 $0.1787
  • 30,000 $0.1703
  • 300,000 $0.1619
$0.1619 / $0.2056 Buy Now
DISTI # 781-SI2306BDS-T1-GE3
Mouser Electronics MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V RoHS: Compliant 4224
  • 1 $0.6000
  • 10 $0.5010
  • 100 $0.3600
  • 500 $0.2820
  • 1,000 $0.2210
  • 3,000 $0.1950
  • 9,000 $0.1700
  • 24,000 $0.1660
$0.1660 / $0.6000 Buy Now
DISTI # V72:2272_09216787
Arrow Electronics Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2411 Container: Cut Strips Americas - 2950
  • 1 $0.4430
  • 10 $0.3939
  • 25 $0.3911
  • 50 $0.3909
  • 100 $0.2960
  • 250 $0.2935
  • 500 $0.2383
  • 1,000 $0.1667
$0.1667 / $0.4430 Buy Now
Future Electronics N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1760
  • 6,000 $0.1720
  • 9,000 $0.1700
  • 15,000 $0.1680
  • 30,000 $0.1630
$0.1630 / $0.1760 Buy Now
Future Electronics N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1760
  • 6,000 $0.1720
  • 9,000 $0.1700
  • 15,000 $0.1680
  • 30,000 $0.1630
$0.1630 / $0.1760 Buy Now
DISTI # 79003351
Verical Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 36 Package Multiple: 1 Date Code: 2411 Americas - 2950
  • 36 $0.3911
  • 50 $0.3909
  • 100 $0.2960
  • 250 $0.2935
  • 500 $0.2383
  • 1,000 $0.1667
$0.1667 / $0.3911 Buy Now
DISTI # 71241079
Verical Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 96 Package Multiple: 1 Date Code: 2333 Americas - 1645
  • 96 $0.3275
  • 103 $0.3050
  • 200 $0.3037
  • 500 $0.2563
  • 1,000 $0.2425
$0.2425 / $0.3275 Buy Now
Bristol Electronics   9000
RFQ
DISTI # SI2306BDS-T1-GE3
TTI MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.1900
  • 6,000 $0.1830
  • 9,000 $0.1780
  • 15,000 $0.1740
  • 30,000 $0.1710
  • 300,000 $0.1630
$0.1630 / $0.1900 Buy Now
DISTI # SI2306BDS-T1-GE3
Avnet Asia Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days 0
RFQ
Chip1Cloud MOSFET N-CH 30V 3.16A SOT23-3 18000
RFQ
DISTI # C1S806000595708
Chip1Stop Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R RoHS: Not Compliant pbFree: No Container: Cut Tape 1645
  • 5 $0.3920
  • 50 $0.2620
  • 100 $0.2440
  • 200 $0.2430
  • 500 $0.2050
  • 1,000 $0.1940
$0.1940 / $0.3920 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 1320
  • 1 $2.7700
  • 100 $2.0800
  • 1,000 $1.8000
$1.8000 / $2.7700 Buy Now
DISTI # SI2306BDS-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
Sense Electronic Company Limited SOT-23 2129
RFQ

Part Details for SI2306BDS-T1-GE3

SI2306BDS-T1-GE3 CAD Models

SI2306BDS-T1-GE3 Part Data Attributes:

SI2306BDS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2306BDS-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Alternate Parts for SI2306BDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2306BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2306BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2306BDS-T1-E3 TRANSISTOR 3160 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2306BDS-T1-GE3 vs SI2306BDS-T1-E3
SI2306BDS-T1-GE3 TRANSISTOR 3160 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2306BDS-T1-GE3 vs SI2306BDS-T1-GE3
Part Number Description Manufacturer Compare
BS107ZL1 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN onsemi SI2306BDS-T1-GE3 vs BS107ZL1
VN1306N3P011 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc SI2306BDS-T1-GE3 vs VN1306N3P011
2SK303-2-TA Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 SANYO Electric Co Ltd SI2306BDS-T1-GE3 vs 2SK303-2-TA
ZVP4105ASTZ 180 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, E-LINE PACKAGE-3 Diodes Incorporated SI2306BDS-T1-GE3 vs ZVP4105ASTZ
2N7002-7-F Small Signal Field-Effect Transistor, SPC Multicomp SI2306BDS-T1-GE3 vs 2N7002-7-F
J113LE3 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN Vishay Intertechnologies SI2306BDS-T1-GE3 vs J113LE3
2SK3449 Small Signal Field-Effect Transistor, 4.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126ML, 3 PIN SANYO Electric Co Ltd SI2306BDS-T1-GE3 vs 2SK3449
BS170 Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, PLASTIC PACKAGE-3 Diodes Incorporated SI2306BDS-T1-GE3 vs BS170
2SK771-17-TA Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 SANYO Semiconductor Co Ltd SI2306BDS-T1-GE3 vs 2SK771-17-TA
ZVN4106FTC Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Zetex / Diodes Inc SI2306BDS-T1-GE3 vs ZVN4106FTC

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