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Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
E02:0323_00529766
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Arrow Electronics | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Date Code: 2340 | Europe - 3000 |
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$0.1632 / $0.2021 | Buy Now |
DISTI #
V72:2272_07432031
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Arrow Electronics | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2340 Container: Cut Strips | Americas - 1038 |
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$0.1688 / $0.5190 | Buy Now |
DISTI #
E21:3489_00529766
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Arrow Electronics | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2324 | Europe - 899 |
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$0.1449 / $0.4145 | Buy Now |
DISTI #
78449385
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Verical | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2325 | Americas - 228000 |
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$0.1837 / $0.2291 | Buy Now |
DISTI #
76887557
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Verical | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2340 | Americas - 3000 |
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$0.2208 | Buy Now |
DISTI #
76884229
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Verical | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R Min Qty: 41 Package Multiple: 1 Date Code: 2340 | Americas - 1038 |
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$0.5190 | Buy Now |
DISTI #
SI2308BDS-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 33000 |
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$0.1428 / $0.1815 | Buy Now |
DISTI #
16P3708
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Newark | N Channel Mosfet, 60V, 2.3A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14127 |
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$0.2000 / $0.2190 | Buy Now |
DISTI #
71T8044
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Newark | N Channel Mosfet, 60V, 2.3A, To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2630 | Buy Now |
DISTI #
47Y1306
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Newark | Mosfet Transistor, N Channel, 2.3 A, 60 V, 0.13 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 60433 |
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$0.2920 / $0.5510 | Buy Now |
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SI2308BDS-T1-GE3
Vishay Intertechnologies
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Datasheet
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SI2308BDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.9 A | |
Drain-source On Resistance-Max | 0.156 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.66 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2308BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2308BDS-T1-BE3 | Small Signal Field-Effect Transistor, | Vishay Intertechnologies | SI2308BDS-T1-GE3 vs SI2308BDS-T1-BE3 |
SI2308CDS-T1-GE3 | Small Signal Field-Effect Transistor, | Vishay Intertechnologies | SI2308BDS-T1-GE3 vs SI2308CDS-T1-GE3 |