Part Details for SI2333CDS-T1-GE3 by Vishay Siliconix
Results Overview of SI2333CDS-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI2333CDS-T1-GE3 Information
SI2333CDS-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| IXF1002EDT-G | Rochester Electronics LLC | IXF1002 - Dual Port Gigabit Ethernet Controller | |
| AM79C961AVI | Rochester Electronics LLC | Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless | |
| IXF1002ED | Rochester Electronics LLC | IXF1002ED - Dual Port Gigabit Ethernet Controller |
Price & Stock for SI2333CDS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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New Advantage Corporation | P-Channel 12 V 0.039 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 24000 |
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$0.4692 / $0.5083 | Buy Now |
Part Details for SI2333CDS-T1-GE3
SI2333CDS-T1-GE3 CAD Models
SI2333CDS-T1-GE3 Part Data Attributes
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SI2333CDS-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SI2333CDS-T1-GE3
Vishay Siliconix
TRANSISTOR 5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 260 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for SI2333CDS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2333CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2333CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2333CDS-T1-E3 | Vishay Intertechnologies | $0.3782 | Small Signal Field-Effect Transistor, 7.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2333CDS-T1-GE3 vs SI2333CDS-T1-E3 |
| SI2333CDS-T1-GE3 | Vishay Intertechnologies | $0.3853 | Small Signal Field-Effect Transistor, 7.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2333CDS-T1-GE3 vs SI2333CDS-T1-GE3 |
| SI2333CDS-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | SI2333CDS-T1-GE3 vs SI2333CDS-T1-E3 |
| RAQ045P01TR | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT6, 6 PIN | SI2333CDS-T1-GE3 vs RAQ045P01TR |
SI2333CDS-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI2333CDS-T1-GE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
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To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.
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The SI2333CDS-T1-GE3 is designed to operate up to 100MHz, but the actual operating frequency may vary depending on the specific application and PCB layout. It's recommended to consult the datasheet and application notes for more information.
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To prevent ESD damage, handle the SI2333CDS-T1-GE3 with an anti-static wrist strap or mat, and ensure the PCB is properly grounded. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design.
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The thermal resistance of the SI2333CDS-T1-GE3 is typically around 250°C/W (junction-to-ambient) and 125°C/W (junction-to-case). However, this value may vary depending on the specific application and PCB design.