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Part Details for SI2371EDS-T1-GE3 by Vishay Intertechnologies
Results Overview of SI2371EDS-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SI2371EDS-T1-GE3 Information
SI2371EDS-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| IXF1002EDT-G | Rochester Electronics LLC | IXF1002 - Dual Port Gigabit Ethernet Controller | |
| AM79C961AVI | Rochester Electronics LLC | Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless | |
| IXF1002ED | Rochester Electronics LLC | IXF1002ED - Dual Port Gigabit Ethernet Controller |
Price & Stock for SI2371EDS-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
04AJ4585
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Newark | Mosfet, P-Ch, -30V, -4.8A, Sot-23-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-4.8A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.037Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.5V, Power Rohs Compliant: Yes |Vishay SI2371EDS-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14638 |
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$0.1440 / $0.4400 | Buy Now |
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DISTI #
49AM0102
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Newark | Mosfet, P-Ch, 30V, 4.8A, Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Vishay SI2371EDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3000 |
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$0.0900 / $0.3520 | Buy Now |
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DISTI #
99W9606
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Newark | Mosfet Transistor, P Channel, -4.8 A, -30 V, 0.037 Ohm, -10 V, -1.5 V Rohs Compliant: Yes |Vishay SI2371EDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 0 |
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$0.0920 / $0.1320 | Buy Now |
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DISTI #
79AH6519
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Newark | P-Channel 30-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2371EDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 0 |
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$0.0880 / $0.1290 | Buy Now |
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DISTI #
SI2371EDS-T1-GE3
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Avnet Americas | - Tape and Reel (Alt: SI2371EDS-T1-GE3) COO: Germany RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.0682 / $0.0696 | Buy Now |
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DISTI #
49AM0102
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Avnet Americas | (Alt: 49AM0102) RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 0 |
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$0.0900 / $0.3520 | Buy Now |
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Bristol Electronics | Min Qty: 16 | 3429 |
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$0.0658 / $0.3292 | Buy Now |
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DISTI #
SI2371EDS-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -30V, -4.8A, Idm: -20A, 1.1W, SOT23 Min Qty: 1 | 0 |
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$0.1110 / $0.4300 | RFQ |
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DISTI #
TMOS3343
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Rutronik | P-CH 30V 4,8A 37mOhm SOT-23 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tape & Reel |
Stock DE - 51000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.0998 / $0.1294 | Buy Now |
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DISTI #
SI2371EDS-T1-GE3
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Avnet Asia | (Alt: SI2371EDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days | 0 |
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RFQ |
Part Details for SI2371EDS-T1-GE3
SI2371EDS-T1-GE3 CAD Models
SI2371EDS-T1-GE3 Part Data Attributes
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SI2371EDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2371EDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-236, Sot-23, 3 Pin | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.8 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 1.7 W | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for SI2371EDS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2371EDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2371EDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TP0202K-T1-GE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 0.385A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | SI2371EDS-T1-GE3 vs TP0202K-T1-GE3 |
| TP0202K-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 385 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | SI2371EDS-T1-GE3 vs TP0202K-T1-E3 |
SI2371EDS-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI2371EDS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
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The SI2371EDS-T1-GE3 is capable of delivering up to 1A of continuous output current. However, it's recommended to derate the output current to 0.8A for optimal reliability and thermal performance.
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To ensure reliable operation, it's essential to provide adequate thermal management for the SI2371EDS-T1-GE3. A thermal pad on the PCB, connected to a copper plane or a heat sink, can help dissipate heat. Additionally, ensure good airflow around the device and avoid blocking airflow with nearby components.
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The SI2371EDS-T1-GE3 has built-in ESD protection up to 2kV (Human Body Model) and 100V (Machine Model). It also features latch-up immunity to ensure reliable operation in harsh environments.