There are no models available for this part yet.
Overview of SI2377EDS-T1-GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 13 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI2377EDS-T1-GE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
86R3873
|
Newark | Mosfet, P Channel, -20V, -4.4A, Sot-23-3, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:1.8W, Msl:- Rohs Compliant: Yes |Vishay SI2377EDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1230 / $0.2000 | Buy Now | |
DISTI #
23T8501
|
Newark | Mosfet, P-Ch, 20V, 4.4A, 150Deg C, 1.25W, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:400Mv Rohs Compliant: Yes |Vishay SI2377EDS-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.2800 / $0.4500 | Buy Now | |
DISTI #
SI2377EDS-T1-GE3
|
Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2377EDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1166 | Buy Now | |
DISTI #
781-SI2377EDS-T1-GE3
|
Mouser Electronics | MOSFETs -20V Vds 8V Vgs SOT-23 RoHS: Compliant | 18265 |
|
$0.1360 / $0.4200 | Buy Now | |
Future Electronics | Single P-Channel 20 V 61 mOhm Surface Mount TrenchFET Power Mosfet - TO-236 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 12000Reel |
|
$0.1140 / $0.1240 | Buy Now | ||
Future Electronics | Single P-Channel 20 V 61 mOhm Surface Mount TrenchFET Power Mosfet - TO-236 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1140 / $0.1240 | Buy Now | ||
DISTI #
SI2377EDS-T1-GE3
|
TTI | MOSFETs -20V Vds 8V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.1220 / $0.1350 | Buy Now | |
DISTI #
SI2377EDS-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -20V, -3.5A, 1.1W, SOT23 Min Qty: 3 | 2880 |
|
$0.1960 / $0.2940 | Buy Now | |
Chip 1 Exchange | INSTOCK | 19500 |
|
RFQ | |||
DISTI #
C1S803602001703
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 3000 |
|
$0.1550 | Buy Now |
CAD Models for SI2377EDS-T1-GE3 by Vishay Intertechnologies
Part Data Attributes for SI2377EDS-T1-GE3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
TO-236, SOT-23, 3 PIN
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Configuration
|
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
4.4 A
|
Drain-source On Resistance-Max
|
0.061 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-236AB
|
JESD-30 Code
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
1.8 W
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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