There are no models available for this part yet.
Overview of SI2377EDS-T1-GE3 by Vishay Siliconix
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI2377EDS-T1-GE3 by Vishay Siliconix
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SI2377EDS-T1-GE3CT-ND
|
DigiKey | MOSFET P-CH 20V 4.4A SOT23-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
20593 In Stock |
|
$0.1187 / $0.6800 | Buy Now | |
DISTI #
70616158
|
RS | SI2377EDS-T1-GE3 P-channel MOSFET Transistor, 3.5 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2377EDS-T1-GE3 RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.2560 / $0.3010 | RFQ | |
New Advantage Corporation | Single P-Channel 20 V 61 mOhm Surface Mount TrenchFET Power Mosfet - TO-236 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 24000 |
|
$0.1507 / $0.1614 | Buy Now |
CAD Models for SI2377EDS-T1-GE3 by Vishay Siliconix
Part Data Attributes for SI2377EDS-T1-GE3 by Vishay Siliconix
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
Part Package Code
|
SOT-23
|
Package Description
|
SMALL OUTLINE, R-PDSO-G8
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Configuration
|
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
4.4 A
|
Drain-source On Resistance-Max
|
0.061 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-236AB
|
JESD-30 Code
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
1.8 W
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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