-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SI4090DY-T1-GE3 by Vishay Intertechnologies
Results Overview of SI4090DY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
SI4090DY-T1-GE3 Information
SI4090DY-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| IXF1002EDT-G | Rochester Electronics LLC | IXF1002 - Dual Port Gigabit Ethernet Controller | |
| AM79C961AVI | Rochester Electronics LLC | Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless | |
| IXF1002ED | Rochester Electronics LLC | IXF1002ED - Dual Port Gigabit Ethernet Controller |
Price & Stock for SI4090DY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2364058
|
Farnell | MOSFET, N-CH, 100V, 19.7A, SOIC-8 RoHS: Compliant Min Qty: 1 Lead time: 36 Weeks, 1 Days Container: Each | 4110 |
|
$0.6100 / $1.5283 | Buy Now |
|
DISTI #
SI4090DY-T1-GE3
|
Avnet Americas | - Tape and Reel (Alt: SI4090DY-T1-GE3) COO: China RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 33 Weeks, 0 Days Container: Reel | 0 |
|
$0.5098 / $0.5375 | Buy Now |
|
|
Bristol Electronics | 92 |
|
RFQ | ||
|
DISTI #
SI4090DY-T1-GE3
|
Avnet Asia | (Alt: SI4090DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 32 Weeks, 0 Days | 0 |
|
RFQ | |
|
|
Chip Stock | N-Channel100V10mOhm7.8WSurfaceMountPowerMosfet-SOIC-8 | 11500 |
|
RFQ | |
|
DISTI #
SI4090DY-T1-GE3
|
EBV Elektronik | (Alt: SI4090DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 31 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
LCSC | 100V 19.7A 10m10V19.7A 3.5W 3.3V 1 N-Channel SO-8 Single FETs MOSFETs RoHS | 122 |
|
$0.8332 / $1.5437 | Buy Now |
|
DISTI #
SI4090DY-T1-GE3
|
Maritex | MOSFET Devices, VISHAY, SI4090DY-T1-GE3, 100 V, 19.7 A, 20 V, 3.5 W Min Qty: 1 Package Multiple: 1 | 4180 |
|
$2.3590 | Buy Now |
Part Details for SI4090DY-T1-GE3
SI4090DY-T1-GE3 CAD Models
SI4090DY-T1-GE3 Part Data Attributes
|
|
SI4090DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4090DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 19.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Package Description | Halogen Free And Rohs Compliant, Ms-012, Soic-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 29 Weeks | |
| Avalanche Energy Rating (Eas) | 45 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 19.7 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | Trench Mosfet | |
| Feedback Cap-Max (Crss) | 60 Pf | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 7.8 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 90 Ns | |
| Turn-on Time-Max (ton) | 54 Ns |
SI4090DY-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the SI4090DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
-
To ensure the SI4090DY-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is operated within the recommended temperature range of -40°C to 150°C. Additionally, follow proper thermal management and PCB design guidelines to prevent overheating.
-
The maximum allowed power dissipation for the SI4090DY-T1-GE3 is 1.4 W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions.
-
Yes, the SI4090DY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured in accordance with IATF 16949:2016.
-
The typical turn-on and turn-off time for the SI4090DY-T1-GE3 is around 10-20 ns, depending on the specific application and operating conditions.