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Part Details for SI4435DYPBF by Infineon Technologies AG
Overview of SI4435DYPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4435DYPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI4435DYPBF-ND
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DigiKey | MOSFET P-CH 30V 8A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
1013478
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element14 Asia-Pacific | MOSFET, P, LOGIC, SO-8 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.3792 / $0.8450 | Buy Now |
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DISTI #
1013478
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Farnell | MOSFET, P, LOGIC, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Each | 0 |
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$0.4038 / $0.8952 | Buy Now |
Part Details for SI4435DYPBF
SI4435DYPBF CAD Models
SI4435DYPBF Part Data Attributes
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SI4435DYPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SI4435DYPBF
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4435DYPBF
This table gives cross-reference parts and alternative options found for SI4435DYPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4435DYPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4435DYPBF | Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | SI4435DYPBF vs SI4435DYPBF |