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Part Details for SI4463CDY-T1-GE3 by Vishay Intertechnologies
Results Overview of SI4463CDY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI4463CDY-T1-GE3 Information
SI4463CDY-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| IXF1002EDT-G | Rochester Electronics LLC | IXF1002 - Dual Port Gigabit Ethernet Controller | |
| AM79C961AVI | Rochester Electronics LLC | Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless | |
| IXF1002ED | Rochester Electronics LLC | IXF1002ED - Dual Port Gigabit Ethernet Controller |
Price & Stock for SI4463CDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64T4067
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Newark | Mosfet, P Channel, W/D, 20V, 18.6A, So8, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:18.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Vishay SI4463CDY-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10 |
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$0.7020 / $1.3200 | Buy Now |
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DISTI #
67X6865
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Newark | Mosfet Transistor, P Channel, -18.6 A, -20 V, 0.006 Ohm, -10 V, -600 Mv |Vishay SI4463CDY-T1-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5050 / $0.5700 | Buy Now |
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DISTI #
SI4463CDY-T1-GE3
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Avnet Americas | - Tape and Reel (Alt: SI4463CDY-T1-GE3) COO: China RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
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$0.3176 / $0.3375 | Buy Now |
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DISTI #
SI4463CDY-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -18.6A, Idm: -60A Min Qty: 1 | 76 |
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$0.4970 / $1.1700 | Buy Now |
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DISTI #
LVMOS1542
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Rutronik | P-CH 20V 18,6A 8mOhm SOIC8 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Stock DE - 5000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4348 / $0.5742 | Buy Now |
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DISTI #
SI4463CDY-T1-GE3
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Avnet Asia | (Alt: SI4463CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days | 0 |
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RFQ | |
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Chip Stock | MOSFET,PCH,W/D,20V,18.6A,SO8, TransistorPolarity:PChannel, ContinuousDr | 162500 |
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RFQ | |
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DISTI #
SI4463CDY-T1-GE3
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EBV Elektronik | (Alt: SI4463CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 33 Weeks, 0 Days | EBV - 2500 |
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Buy Now | |
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DISTI #
SI4463CDY-T1-GE3
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Maritex | MOSFET Devices, VISHAY, SI4463CDY-T1-GE3, -20 V, -13.6 A, 12 V, 2.7 W Min Qty: 1 Package Multiple: 1 | 4750 |
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$0.4500 / $1.0380 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.8050 | Buy Now |
Part Details for SI4463CDY-T1-GE3
SI4463CDY-T1-GE3 CAD Models
SI4463CDY-T1-GE3 Part Data Attributes
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SI4463CDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4463CDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Halogen Free And Rohs Compliant, Ms-012, Soic-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 18.6 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 830 Pf | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 5 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 180 Ns | |
| Turn-on Time-Max (ton) | 130 Ns |
Alternate Parts for SI4463CDY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4463CDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4463CDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI4463CDY-T1-GE3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | SI4463CDY-T1-GE3 vs SI4463CDY-T1-GE3 |
| SI9433BDY-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | SI4463CDY-T1-GE3 vs SI9433BDY-T1-E3 |
| SI9433BDY-T1-GE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | SI4463CDY-T1-GE3 vs SI9433BDY-T1-GE3 |
| SI9433BDY-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | SI4463CDY-T1-GE3 vs SI9433BDY-T1-GE3 |
SI4463CDY-T1-GE3 Frequently Asked Questions (FAQ)
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A good PCB layout for the SI4463CDY-T1-GE3 involves keeping the RF traces as short as possible, using a solid ground plane, and placing the device near the antenna. It's also recommended to use a 4-layer PCB with a dedicated ground plane and to avoid routing signals under the device.
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To ensure reliable communication in a noisy environment, use a robust modulation scheme like GFSK or OOK, and implement error correction mechanisms like CRC and FEC. Additionally, use a high-quality antenna and ensure proper antenna tuning. It's also recommended to implement frequency hopping and adaptive frequency agility to mitigate interference.
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The maximum transmit power of the SI4463CDY-T1-GE3 is +13 dBm, but this can be limited by the antenna and the PCB design. It's recommended to use a high-gain antenna and optimize the PCB layout to achieve the maximum transmit power.
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The SI4463CDY-T1-GE3 has a built-in low-power mode that can be enabled by setting the device to sleep mode. In sleep mode, the device consumes only 0.2 μA of current. To implement low-power mode, use the SPI interface to set the device to sleep mode and wake it up only when necessary.
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The maximum data rate of the SI4463CDY-T1-GE3 is 1 Mbps, but this can be limited by the modulation scheme and the channel bandwidth. It's recommended to use a high-data-rate modulation scheme like GFSK or OQPSK to achieve the maximum data rate.