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Part Details for SI4946BEY-T1-E3 by Vishay Intertechnologies
Overview of SI4946BEY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SI4946BEY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M9808
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Newark | Dual Mosfet, Dual N Channel, 6.5 A, 60 V, 0.033 Ohm, 20 V, 2.4 V Rohs Compliant: Yes |Vishay SI4946BEY-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 51564 |
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$1.0800 / $1.7000 | Buy Now |
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DISTI #
75M3216
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Newark | Dual N Channel Mosfet, 60V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:6.5A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Vishay SI4946BEY-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7598 |
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$0.7700 / $0.9090 | Buy Now |
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DISTI #
87K0417
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Newark | Dual N Channel Mosfet, 60V, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:6.5A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Vishay SI4946BEY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6660 / $0.6950 | Buy Now |
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DISTI #
SI4946BEY-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4946BEY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel | 77500 |
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$0.4730 / $0.6009 | Buy Now |
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DISTI #
SI4946BEY-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4946BEY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
|
$0.4730 / $0.6009 | Buy Now |
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DISTI #
75M3216
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 75M3216) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack | 7598 Partner Stock |
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$0.9940 / $1.5300 | Buy Now |
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DISTI #
781-SI4946BEY-E3
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Mouser Electronics | MOSFET 60V 6.5A 3.7W RoHS: Compliant | 45865 |
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$0.6240 / $1.3400 | Buy Now |
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DISTI #
E02:0323_00021475
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Arrow Electronics | Trans MOSFET N-CH 60V 6.5A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Date Code: 2402 | Europe - 5000 |
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$0.6769 / $0.6780 | Buy Now |
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DISTI #
V36:1790_07432400
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Arrow Electronics | Trans MOSFET N-CH 60V 6.5A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks Date Code: 2326 | Americas - 5000 |
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$0.5323 / $0.5664 | Buy Now |
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DISTI #
V72:2272_07432400
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Arrow Electronics | Trans MOSFET N-CH 60V 6.5A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2228 Container: Cut Strips | Americas - 43 |
|
$0.5721 / $0.8219 | Buy Now |
Part Details for SI4946BEY-T1-E3
SI4946BEY-T1-E3 CAD Models
SI4946BEY-T1-E3 Part Data Attributes:
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SI4946BEY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4946BEY-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 7.2 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 44 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.7 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 55 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for SI4946BEY-T1-E3
This table gives cross-reference parts and alternative options found for SI4946BEY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4946BEY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DMNH6022SSDQ-13 | Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Diodes Incorporated | SI4946BEY-T1-E3 vs DMNH6022SSDQ-13 |
| SI4946BEY-T1-E3 | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4946BEY-T1-E3 vs SI4946BEY-T1-E3 |
| SI4946BEY-T1-GE3 | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4946BEY-T1-E3 vs SI4946BEY-T1-GE3 |
| SI4946BEY-T1-GE3 | Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8 | Vishay Intertechnologies | SI4946BEY-T1-E3 vs SI4946BEY-T1-GE3 |
| DMNH6022SSD-13 | Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Diodes Incorporated | SI4946BEY-T1-E3 vs DMNH6022SSD-13 |