Part Details for SI4963DY-T1 by Vishay Siliconix
Overview of SI4963DY-T1 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI4963DY-T1
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 2168 |
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$0.5940 / $1.8000 | Buy Now |
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Quest Components | 1734 |
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$0.6600 / $2.4000 | Buy Now |
Part Details for SI4963DY-T1
SI4963DY-T1 CAD Models
SI4963DY-T1 Part Data Attributes
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SI4963DY-T1
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4963DY-T1
Vishay Siliconix
Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for SI4963DY-T1
This table gives cross-reference parts and alternative options found for SI4963DY-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4963DY-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDS6875 | Dual P-Channel 2.5V Specified PowerTrench™ MOSFET -20V, -6A, 30mΩ, 2500-REEL | onsemi | SI4963DY-T1 vs FDS6875 |
SI4963DY | 6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | SI4963DY-T1 vs SI4963DY |
FDS6875_NL | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4963DY-T1 vs FDS6875_NL |
FDS6890AF011 | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4963DY-T1 vs FDS6890AF011 |
MMDF4207R2 | 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | SI4963DY-T1 vs MMDF4207R2 |
FDS9933BZ | 4.9A, 20V, 0.046ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 | Rochester Electronics LLC | SI4963DY-T1 vs FDS9933BZ |
FDS6890A | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4963DY-T1 vs FDS6890A |
FDS6890AL86Z | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4963DY-T1 vs FDS6890AL86Z |
SI4966DY-T1-E3 | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 | Vishay Intertechnologies | SI4963DY-T1 vs SI4966DY-T1-E3 |
FDS6890A | Dual N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 7.5A, 18mΩ, 2500-REEL | onsemi | SI4963DY-T1 vs FDS6890A |