Part Details for SI5458DU-T1-GE3 by Vishay Intertechnologies
Overview of SI5458DU-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI5458DU-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
35R6242
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Newark | N Channel Mosfet, 30V, 6A, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI5458DU-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.2850 | Buy Now |
DISTI #
SI5458DU-T1-GE3
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Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI5458DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.1841 | Buy Now |
DISTI #
781-SI5458DU-GE3
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Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK ChipFET RoHS: Compliant | 4221 |
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$0.1890 / $0.5600 | Buy Now |
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Future Electronics | Si5458DU Series N-Channel 30 V 0.041 Ohms SMT Power Mosfet - PowerPAK® ChipFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1810 / $0.1930 | Buy Now |
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Future Electronics | Si5458DU Series N-Channel 30 V 0.041 Ohms SMT Power Mosfet - PowerPAK® ChipFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.1810 / $0.1930 | Buy Now |
DISTI #
SI5458DU-T1-GE3
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TTI | MOSFETs 30V Vds 20V Vgs PowerPAK ChipFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.1880 / $0.1990 | Buy Now |
Part Details for SI5458DU-T1-GE3
SI5458DU-T1-GE3 CAD Models
SI5458DU-T1-GE3 Part Data Attributes
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SI5458DU-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI5458DU-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 10.4 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI5458DU-T1-GE3
This table gives cross-reference parts and alternative options found for SI5458DU-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI5458DU-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7788DP-T1-GE3 | Power Field-Effect Transistor, 29.5A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI5458DU-T1-GE3 vs SI7788DP-T1-GE3 |
SI7856ADP-T1-E3 | TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SI5458DU-T1-GE3 vs SI7856ADP-T1-E3 |
SI7170DP-T1-GE3 | Power Field-Effect Transistor, 28.5A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI5458DU-T1-GE3 vs SI7170DP-T1-GE3 |
SI7856ADP-T1-E3 | Power Field-Effect Transistor, 15A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SI5458DU-T1-GE3 vs SI7856ADP-T1-E3 |