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Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI5515CDC-T1-E3CT-ND
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DigiKey | MOSFET N/P-CH 20V 4A 1206-8 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5905 In Stock |
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$0.2625 / $0.8000 | Buy Now |
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SI5515CDC-T1-E3
Vishay Siliconix
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Datasheet
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SI5515CDC-T1-E3
Vishay Siliconix
Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | PURE MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |