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Part Details for SI7119DN-T1-GE3 by Vishay Intertechnologies
Overview of SI7119DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI7119DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
51AC3201
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Newark | Mosfet, P Ch, -200V, 3.8A, Powerpak, Transistor Polarity:P Channel, Continuous Drain Current Id:3.8A, Drain Source Voltage Vds:-200V, On Resistance Rds(On):0.86Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Rohs Compliant: Yes |Vishay SI7119DN-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 15412 |
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$0.7230 / $1.0900 | Buy Now |
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DISTI #
33P5381
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Newark | P Ch Mosfet, -200V, 3.8A, Powerpak, Channel Type:P Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:3.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:6V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7119DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3860 / $0.4560 | Buy Now |
|
DISTI #
SI7119DN-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7119DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.3915 / $0.4974 | Buy Now |
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DISTI #
781-SI7119DN-GE3
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Mouser Electronics | MOSFET -200V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 118756 |
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$0.3630 / $0.9700 | Buy Now |
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Future Electronics | P-CH POWERPAK 1212-8 200V 1050MOHM @ 10V - LEAD (PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Container: Reel | 3000Reel |
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$0.3550 / $0.3750 | Buy Now |
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Future Electronics | P-CH POWERPAK 1212-8 200V 1050MOHM @ 10V - LEAD (PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3550 / $0.3750 | Buy Now |
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DISTI #
SI7119DN-T1-GE3.
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TTI | MOSFET 200V P-CH MOSFET (D-S) 17 pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape |
Americas - 5840 In Stock |
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$0.6260 | Buy Now |
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DISTI #
SI7119DN-T1-GE3
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TTI | MOSFET -200V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 96000 In Stock |
|
$0.3630 / $0.3800 | Buy Now |
|
DISTI #
SI7119DN-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -200V, -1.2A, Idm: -5A, 33W Min Qty: 1 | 0 |
|
$0.5350 / $0.8130 | RFQ |
|
DISTI #
SI7119DN-T1-GE3
|
Avnet Asia | Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212 T/R (Alt: SI7119DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | 0 |
|
$0.4898 / $0.5518 | Buy Now |
Part Details for SI7119DN-T1-GE3
SI7119DN-T1-GE3 CAD Models
SI7119DN-T1-GE3 Part Data Attributes
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SI7119DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7119DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 1.2A I(D), 200V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 1.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 1.2 A | |
| Drain-source On Resistance-Max | 1.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7119DN-T1-GE3
This table gives cross-reference parts and alternative options found for SI7119DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7119DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7119DN-T1-E3 | Power Field-Effect Transistor, 1.2A I(D), 200V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | SI7119DN-T1-GE3 vs SI7119DN-T1-E3 |